Methods for providing bias to a monolithic microwave integrated circuit

1. A method for providing DC bias to an MMIC power amplifier, the method comprising the steps of:

attaching a first end of a bond wire directly to a matching structure; and,

attaching a second end of the bond wire to a DC bias source, wherein the bond wire is configured to have an impedance greater than 50 ohms.

2. The method of claim 1 wherein the impedance of the bond wire is configured to act as a virtual open circuit at RF and microwave frequencies.

3. A method for providing DC bias to an MMIC power amplifier, the method comprising the steps of:

attaching a first end of a bond wire directly to a matching structure;

attaching a second end of the bond wire to a DC bias source; and

preparing the matching structure with an ohmic metal configured to facilitate an electrical connection with the bond wire.

4. A method for providing DC bias to an MMIC power amplifier, the method comprising the steps of:

attaching a first end of a bond wire directly to a matching structure; and

attaching a second end of the bond wire to a DC bias source, wherein the DC bias source comprises a by-pass capacitor.

5. The method of claim 4 further comprising the step of attaching the second end of the bond wire to a first end of the by-pass capacitor, and attaching a second end of the by-pass capacitor to the DC bias source, wherein the by-pass capacitor is located on a different chip than the matching structure.

6. A method for providing DC bias to an MMIC power amplifier, the method comprising the steps of:

attaching a first end of a bond wire directly to a matching structure; and

attaching a second end of the bond wire to a DC bias source, wherein the bond wire is configured to be a quarter wave transmission line.

7. The method of claim 6 wherein the bond wire is less than 150 mils long and approximately a 90 degree phase length at the frequency of operation.

8. A method of RF power amplification comprising the steps of:

electrically communicating a DC bias to a MMIC power amplifier,

wherein the MMIC power amplifier comprises a RF matching structure, and wherein the DC bias is electrically communicated to said RF matching structure via a bond wire that is coupled directly to the RF matching structure; and,

blocking unwanted RF signals with the bond wire.

9. The method of claim 8 wherein the blocking step further comprises blocking unwanted RF signals with the high impedance of the bond wire.

10. The method of claim 8 wherein the bond wire is less than 150 mils long and approximately a 90 degree phase length at the frequency of operation.

11. The method of claim 8 wherein the matching structure comprises an ohmic metal configured to facilitate an electrical connection with the bond wire.

12. The method of claim 8 wherein the bond wire is configured to be a quarter wave transmission line.

13. The method of claim 8 wherein the matching structure is located within an interior portion of the MMIC power amplifier and comprises an ohmic material that is configured to facilitate receiving the bond wire.

14. The method of claim 8 wherein the step of electrically communicating DC bias to the MMIC power amplifier further comprises the step of communicating the DC bias to a by-pass capacitor, and further communicating the DC bias from the by-pass capacitor to the bond wire, wherein the by-pass capacitor is located on a different chip that the matching structure.

15. The method of claim 14 wherein the bond wire is configured to have an impedance greater than 50 ohms.

16. The method of claim 14 wherein the high impedance of the bond wire is configured to act as a virtual open circuit at RF and microwave frequencies.