Gallium-nitride based light emitting diode light emitting layer structure
View Patent ↗A number of light-emitting layer structures for the GaN-based LEDs that can increase the lighting efficiency of the GaN-based LEDs on one hand and facilitate the growth of epitaxial layer with better quality on the other hand are provided. The light-emitting layer structure provided is located between the n-type GaN contact layer and the p-type GaN contact layer. Sequentially stacked on top of the n-type GaN contact layer is the light-emitting layer containing a lower barrier layer, at least one intermediate layer, and an upper barrier layer. That is, the light-emitting layer contains at least one intermediate layer interposed between the upper and lower barrier layers. When there are multiple intermediate layers inside the light-emitting layer, there is an intermediate barrier layer interposed between every two immediately adjacent intermediate layers.
1. A light-emitting layer structure of a GaN-based LED, wherein said LED comprises a sapphire substrate and comprises, on one side of said substrate from bottom to top, a n-type GaN contact layer, a light-emitting layer covering a part of an upper surface of said n-type GaN contact layer, a p-type GaN contact layer covering said light-emitting layer, a positive electrode covering said p-type GaN contact layer, and a negative electrode covering another part of said upper surface of said n-type GaN contact layer not covered by said light-emitting layer, wherein said light-emitting layer, sequentially from bottom to top, comprises:
a lower barrier layer, wherein said lower barrier layer is a super lattice barrier layer comprising at least a first ultra-thin monolayer made of AlN and at least a second ultra-thin monolayer made of GaN, sequentially stacked and interleaved with each other;
a plurality of intermediate layers with an intermediate barrier layer interposed between every two immediately adjacent intermediate layers, each intermediate barrier layer being a super lattice barrier layer comprising at least a third ultra-thin monolayer made of In-doped AlN and at least a fourth ultra-thin monolayer made of In-doped GaN sequentially stacked and interleaved with each other; and
an upper barrier layer, wherein said upper barrier layer is a super lattice barrier layer comprising at least a fifth ultra-thin monolayer made of AlN and at least a sixth ultra-thin monolayer made of GaN, sequentially stacked and interleaved with each other.
2. The light-emitting layer structure of a GaN-based LED according to claim 1 , wherein said intermediate layer is a super lattice well layer comprising at least a seventh ultra-thin monolayer made of InN and at least an eighth ultra-thin monolayer made of GaN, sequentially stacked and interleaved with each other.
3. The light-emitting layer structure of a GaN-based LED according to claim 1 , wherein said upper, intermediate, and lower barrier layers each have a thickness between 5 Å and 300 Å.
4. The light-emitting layer structure of a GaN-based LED according to claim 2 , wherein the seventh ultra-thin monolayers and the eighth ultra-thin monolayers have identical number of layers with no more than five layers respectively, and a thickness between 2 Å and 20 Å for each individual monolayer.
5. The light-emitting layer structure of a GaN-based LED according to claim 1 , wherein the first ultra-thin monolayers and the second ultra-thin monolayers have identical number of layers with no more than five layers respectively, and a thickness between 2 Å and 20 Å for each individual monolayer.
6. The light-emitting layer structure of a GaN-based LED according to claim 1 , wherein the third ultra-thin monolayers and the fourth ultra-thin monolayers have identical number of layers with no more than five layers respectively, and a thickness between 2 Å and 20 Å for each individual monolayer.
7. The light-emitting layer structure of a GaN-based LED according to claim 1 , wherein the fifth ultra-thin monolayers and the sixth ultra-thin monolayers have identical number of layers with no more than five layers respectively, and a thickness between 2 Å and 20 Å for each individual monolayer.