IP Library Granted Patent US 7,327,158
Granted Patent B1
US 7,327,158 · App. 11/461,381 · Granted Feb 5, 2008

Array testing method using electric bias stress for TFT array

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Quick Facts
Patent No.
US 7,327,158
App. No.
11/461,381
Granted
Feb 5, 2008
Kind
B1
Abstract

A method of detecting thin film transistor (TFT) defects in a TFT-liquid crystal display (LCD) panel, includes, in part, applying a stress bias to the TFTs disposed on the panel; and detecting a change in electrical characteristics of the TFTs. The change in the electrical characteristics of the TFTs may be detected using a voltage imaging optical system or an electron beam. The panel temperature may be varied while the bias stress is being applied. The change in the electrical characteristics is optionally detected across an array of the TFTs.

Claims (21)

1. A method for detecting thin film transistor (TFT) defects in a TFT-liquid crystal display (LCD) panel, the method comprising:

applying a stress bias to the TFTs disposed on the panel to cause a change in a threshold voltage or off current of one or more of the TFTs;

terminating the stress bias;

applying test signals to the TFTs; and

detecting the change in the threshold voltage or off current of the one or more of the TFTs in response to the applied test signals.

2. The method of claim 1 wherein the change in the threshold voltage or off current of the one or more of the TFTs is detected using a voltage imaging optical system.

3. The method of claim 1 wherein the change in the threshold voltage or off current of the one or more of the TFTs is detected using an electron beam.

4. The method of claim 1 further comprising:

changing a temperature of the panel while applying the stress bias.

5. The method of claim 4 further comprising:

heating the panel while applying the stress bias.

6. The method of claim 4 further comprising:

cooling the panel while applying the stress bias.

7. The method of claim 1 further comprising:

changing a temperature of the panel while detecting a change in the threshold voltage or off current of the one or more of the TFTs.

8. The method of claim 7 further comprising:

heating the panel while detecting a change in the threshold voltage or off current of the one or more of the TFTs.

9. The method of claim 7 further comprising:

cooling the panel while detecting a change in the threshold voltage or off current of the one or more of the TFTs.

10. The method of claim 1 wherein said TFTs are disposed in an array, the method further comprising:

detecting a changes in the threshold voltage or off current of the one or more of the array of TFTs.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 6, 2021
From: PHOTON DYNAMICS, INC.
To: ORBOTECH LTD.
Reel/Frame 055831/0793 →
RELEASE OF SECURITY INTEREST Recorded Jul 5, 2016
From: JPMORGAN CHASE BANK, N.A.
To: PHOTON DYNAMICS, INC.
Reel/Frame 039076/0165 →
SECURITY INTEREST Recorded Aug 14, 2014
From: PHOTON DYNAMICS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 033543/0631 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 11, 2006
From: JUN, MYUNGCHUL
To: PHOTON DYNAMICS, INC.
Reel/Frame 018094/0608 →