IP Library Granted Patent US 7,354,629
Granted Patent B2
US 7,354,629 · App. 11/463,781 · Granted Apr 8, 2008

Method of forming a protective film and a magnetic recording medium having a protective film formed by the method

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,354,629
App. No.
11/463,781
Granted
Apr 8, 2008
Kind
B2
Abstract

A method of forming a protective film that restrains gas adsorption while preserving durability and corrosion resistance of a plasma CVD carbon film is disclosed. A protective film of a slide-resistant member is deposited by means of a plasma CVD method using a raw material of hydrocarbon gas, wherein a bias voltage higher than −500 V is applied to the slide-resistant member in an initial stage of depositing the protective film, and a bias voltage of −500 V or lower is applied in a final stage of deposition. A proportion of time duration of the final stage is preferably at most 25% of the total time for depositing the protective film. A magnetic recording medium comprising a magnetic recording layer and a protective film formed by the method also is disclosed.

Claims (3)

1. A method of forming a protective film on a magnetic recording medium by means of plasma CVD process using a raw material of hydrocarbon gas, wherein a bias voltage higher than −500 V is applied to the magnetic recording medium in an initial stage of depositing the protective film, and a bias voltage of −500 V or lower is applied in a final stage of deposition.

2. The method of forming a protective film according to claim 1 , wherein a proportion of time duration of the final stage of forming the protective film is at most 25% of a total time of the process of forming the protective film.

3. The method of forming a protective film according to claim 1 , wherein the bias voltage at the initial stage of deposition floats at a potential or −100 V or higher.

Assignments (3)
CHANGE OF NAME Recorded Oct 10, 2011
From: FUJI ELECTRIC DEVICE TECHNOLOGY CO., LTD.
To: FUJI ELECTRIC CO., LTD.
Reel/Frame 027249/0159 →
MERGER Recorded Oct 10, 2011
From: FUJI ELECTRIC DEVICE TECHNOLOGY CO., LTD. (MERGER)
To: FUJI ELECTRIC CO., LTD.
Reel/Frame 027288/0820 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 20, 2006
From: NAGATA, NARUHISA
To: FUJI ELECTRIC DEVICE TECHNOLOGY CO., LTD.
Reel/Frame 018278/0941 →