Self-aligned dual segment liner and method of manufacturing the same

1. A method of forming a dual segment liner covering a first and a second set of semiconductor devices on a single substrate, the method comprising:

forming a first liner covering said first set of semiconductor devices and a first protective layer on top of said first liner, said first protective layer having a flat top surface;

forming a second liner, said second liner having a first section covering said first protective layer, a transitional section on top of an inter-connect structure, and a second section covering said second set of semiconductor devices, said second section being self-aligned to said first liner via said transitional section;

forming a second protective layer on top of said second section of said second liner;

removing said first section and at least a portion of said transitional section of said second liner;

planarizing said second protective layer to be co-planar with at least one of said first and said second liners; and

obtaining said dual segment liner including said first liner, at least a part of said transitional section and said second section of said second liner.

2. The method of claim 1 , wherein forming said second protective layer on top of said second section of said second liner comprises:

depositing said second protective layer on top of said second liner; and

recessing a top surface of said second protective layer to expose said first section and said transitional section of said second liner.

3. The method of claim 2 , wherein recessing said top surface of said second protective layer comprises applying a chemical-mechanical-polishing (CMP) process to remove said second protective layer on top of said first section and said transitional section of said second liner.

4. The method of claim 1 , wherein forming said first protective layer on top of said first liner comprises:

depositing a layer of dielectric material on top of said first liner;

planarizing a top surface of said layer of dielectric material; and

depositing said first protective layer on top of said layer of dielectric material.

5. The method of claim 4 , wherein planarizing said top surface of said dielectric material comprises applying a chemical-mechanical-polishing (CMP) process to recess said top surface of said dielectric material to be co-planar with said first liner.

6. The method of claim 1 , wherein removing said first section and at least a portion of said transitional section of said second liner comprises:

selectively etching said first section and said transitional section of said second liner;

monitoring a content level of exhaust gases from said selective etching; and

continuing said selective etching until said content level of said exhaust gases exhibits a change.

7. The method of claim 6 , comprising continuing said selective etching for a pre-determined time period after said content level exhibits said drop, to remove at least a portion of said transitional section of said second liner that is less than, and preferably equal to, the thickness of said first protective layer.

8. The method of claim 7 , wherein said selective etching comprises applying a reactive-ion-etching (RIE) process using a mixture of gases to remove said first section and said at least a portion of said transitional section of said second liner, said mixture of gases including one or more of CH 3 F, CH 2 F 2 , CHF 3 , CF 4 , O 2 , CO, and Ar.

9. A method of forming a dual segment liner covering a first and a second set of semiconductor devices on a single substrate, the method comprising:

forming a first liner covering said first set of semiconductor devices and a first protective layer on top of said first liner, said first protective layer having a flat top surface;

forming a second liner, said second liner having a first section covering said first protective layer, a transitional section on top of an inter-connect structure, and a second section covering said second set of semiconductor devices, said second section being self-aligned to said first liner via said transitional section;

forming a second protective layer on top of said second liner;

removing said first section and at least a portion of said transitional section of said second liner;

planarizing said second protective layer to be co-planar with at least one of said first and said second liners; and

obtaining said dual segment liner including said first liner, at least a part of said transitional section and said second section of said second liner.

10. The method of claim 9 , wherein removing said first section and said at least a portion of said transitional section of said second liner comprises:

recessing said second protective layer to expose said first section and said transitional section of said second liner;

non-selectively etching said first section and said transitional section of said second liner, and said second protective layer on top of said second section of said second liner;

monitoring a content level of exhaust gases from said non-selective etching; and

terminating said non-selective etching when said content level exhibits a pattern of change.

11. The method of claim 9 , wherein forming said first liner covering said first set of semiconductor devices and said first protective layer on top of said first liner comprises:

forming said first liner covering said first and second sets of semiconductor devices;

forming said first protective layer on top of said first liner; and

removing a portion of said first protective layer and a portion of said first liner to expose said second set of semiconductor devices.

12. The method of claim 11 , wherein forming said first protective layer comprises depositing said first protective layer to have a thickness between about 50 nm and about 1000 nm above a top surface of said first liner.

13. The method of claim 11 , wherein removing said portion of said first protective layer comprises applying a reactive-ion-etching (RIE) process using a mixture of gases including one or more of C 4 F 6 , C 4 F 8 , C 5 F 8 , O 2 , and Ar.

14. The method of claim 11 , wherein removing said portion of said first liner comprises applying a reactive-ion-etching (RIE) process using a mixture of gases including one or more of CH 3 F, CH 2 F 2 , CHF 3 , CF 4 , O 2 , CO, and Ar.