Method for fabricating a semiconductor device having a heat radiation layer

1. A method of fabricating a semiconductor device comprising:

providing a semiconductor wafer having a first surface and a second surface opposite of the first surface, the first surface having a plurality of circuit elements each of which is defined by scribe lines formed in the semiconductor wafer;

forming a sealing resin on the first surface of the semiconductor wafer;

forming a plurality of external terminals on the first surface of the semiconductor wafer, the external terminals respectively electrically connect to the circuit elements and project from the sealing resin;

adhering the first surface of the semiconductor wafer to a supporter;

separating the semiconductor wafer at the scribe lines, to divide the semiconductor wafer into a plurality of chips, each of the chips including a top surface corresponding to the first surface of the semiconductor wafer, a bottom surface corresponding to the second surface of the semiconductor wafer, and side surfaces between the top and bottom surfaces; and

spraying a heat spreading material on the chips after said separating, to coat the bottom surfaces and side surfaces of the chips with the heat spreading material, wherein the chips remain adhered to the supporter during said spraying.

2. The method according to claim 1 , wherein the supporter is an adhesive tape.

3. The method according to claim 2 , wherein said separating comprises:

cutting the semiconductor wafer at the scribe lines using a blade to provide the chips; and

stretching the adhesive tape to separate the chips away from each other.

4. The method according to claim 1 , wherein said forming a plurality of external terminals occurs before said adhering.

5. The method according to claim 3 , wherein said forming a plurality of external terminals occurs before said adhering.

6. The method according to claim 3 , further comprising:

removing the adhesive tape after said spraying,

said forming a plurality of external terminals occurs before said removing.

7. A method of fabricating a semiconductor device comprising:

forming a sealing resin on a first surface of a semiconductor wafer, the first surface having circuit elements with scribe lines therebetween and having post electrodes thereon connected to the circuit elements, the post electrodes each having a surface exposed from the sealing layer;

forming external terminals on the exposed surfaces of the post electrodes;

adhering the first surface of the semiconductor wafer to a support;

separating the circuit elements from each other along the scribe lines, to provide a plurality of chips, each of the chips including a top surface corresponding to the first surface of the semiconductor wafer, a bottom surface, and side surfaces between the top and bottom surfaces; and

spraying a heat spreading material on the bottom surface of each of the chips and on the side surfaces of each of the chips, wherein the chips remain adhered to the support during said spraying.

8. The method of claim 7 , wherein the support is an adhesive tape.

9. The method of claim 8 , wherein said separating comprises:

cutting the semiconductor wafer at the scribe lines using a blade; and

stretching the adhesive tape to separate the cut semiconductor wafer into the chips.

10. The method of claim 9 , further comprising:

removing the adhesive tape after said spraying,

said forming external terminals occurs after said removing.

11. The method according to claim 9 , wherein said forming a plurality of external terminals occurs before said adhering.

12. The method of claim 7 , wherein said forming external terminals occurs before said adhering.