Biasing device for low parasitic capacitance in integrated circuit applications
View Patent ↗The present invention is directed to an apparatus and method for reducing a parasitic capacitance in an integrated circuit. The apparatus includes a substrate and a biasing device. The substrate has a circuit disposed thereon, wherein a first capacitance exists between the substrate and an element of the circuit. The biasing device DC biases a first portion of the substrate to a voltage different than a voltage of a second portion of the substrate, thereby inducing a second capacitance between the first portion of the substrate and the second portion of the substrate. The second capacitance is in series with the first capacitance.
1. An apparatus for reducing a parasitic capacitance in an integrated circuit, comprising:
a substrate, upon which the integrated circuit is disposed, having a first capacitance between a first portion of the substrate and an element of the integrated circuit; and
a diode, including a first portion and a second portion, the second portion of the diode being in electrical contact with the first portion of the substrate, configured to bias the first portion of the substrate to a voltage different than a voltage of a second portion of the substrate to induce a second capacitance between the first portion of the substrate and the second portion of the substrate,
wherein the first portion of the substrate and the first portion of the diode each comprise a concentration of dopants of a first type, and
wherein the second portion of the substrate and the second portion of the diode each comprise a concentration of dopants of a second type, the dopants of the second type being different from the dopants of the first type.
2. The apparatus of claim 1 , wherein the first portion of the substrate comprises an NWELL and the second portion of the substrate comprises a PWELL.
3. The apparatus of claim 1 , wherein the first portion of the substrate comprises a PWELL and the second portion of the substrate comprises an NWELL.
4. The apparatus of claim 1 , wherein the apparatus is configured and arranged such that a voltage, applied to the first portion of the diode, causes the diode to bias the first portion of the substrate to the voltage different than the voltage of the second portion of the substrate.
5. The apparatus of claim 4 , further comprising:
a supply voltage source for the integrated circuit disposed on the substrate to provide the voltage.
6. An apparatus for reducing a parasitic capacitance in an integrated circuit, comprising:
a substrate, upon which the integrated circuit is disposed, having a first capacitance between a first portion of the substrate and an element of the integrated circuit; and
a diode, including a first portion and a second portion, the second portion of the diode being in electrical contact with the first portion of the substrate, configured to bias the first portion of the substrate to a voltage different than a voltage of a second portion of the substrate to induce a second capacitance between the first portion of the substrate and the second portion of the substrate,
wherein the substrate includes a third portion configured to induce a third capacitance, in series with the first capacitance and the second capacitance, between the first portion of the substrate and the third portion of the substrate.
7. The apparatus of claim 6 , wherein the first portion of the substrate comprises a concentration of dopants of a first type, each of the second and third portions of the substrate comprise concentrations of dopants of a second type, and the dopants of the first type are different than the dopants of the second type.
8. The apparatus of claim 6 , wherein the first portion of the substrate comprises an NWELL and each of the second and third portions of the substrate comprise PWELLs.
9. The apparatus of claim 6 , wherein the first portion of the substrate comprises a PWELL and each of the second and third portions of the substrate comprise NWELLs.
10. The apparatus of claim 6 , wherein the first portion of the diode comprises a concentration of dopants of a first type and the second portion of the diode comprises a concentration of dopants of a second type, the dopants of the second type being different from the dopants of the first type.
11. The apparatus of claim 6 , wherein the first portion of the substrate and the first portion of the diode each comprise a concentration of dopants of a first type and the second portion of the substrate and the second portion of the diode each comprise a concentration of dopants of a second type, the dopants of the second type being different from the dopants of the first type.
12. A method for reducing a parasitic capacitance in an integrated circuit, comprising:
(a) forming the integrated circuit onto a substrate, the integrated circuit and the substrate being configured such that a first capacitance exists between a first portion of the substrate and an element of the integrated circuit; and
(b) using a diode, the diode including a first portion and a second portion, the second portion of the diode being in electrical contact with the first portion of the substrate, to bias the first portion of the substrate to a voltage different than a voltage of a second portion of the substrate thereby inducing a second capacitance between the first portion of the substrate and the second portion of the substrate, the first portion of the substrate and the first portion of the diode each comprising a concentration of dopants of a first type and the second portion of the substrate and the second portion of the diode each comprising a concentration of dopants of a second type, the dopants of the second type being different from the dopants of the first type.
13. The method of claim 12 , wherein step (b) comprises:
(b)(i) using the diode to bias an NWELL to a voltage different than a voltage of a PWELL to induce the second capacitance in series with the first capacitance between the NWELL and the PWELL.
14. The method of claim 12 , wherein step (b) comprises:
(b)(i) using the diode to bias a PWELL to a voltage different than a voltage of an NWELL to induce the second capacitance in series with the first capacitance between the PWELL and the NWELL.
15. The method of claim 12 , wherein step (b) comprises:
(b)(i) applying a voltage to the first portion of the diode to bias the first portion of the substrate to the voltage different than the voltage of the second portion of the substrate.
16. The method of claim 15 , further comprising:
(c) receiving the voltage from a supply voltage for the integrated circuit disposed on the substrate.
17. A method for reducing a parasitic capacitance in an integrated circuit, comprising:
(a) forming the integrated circuit onto a substrate, the integrated circuit and the substrate being configured such that a first capacitance exists between a first portion of the substrate and an element of the integrated circuit;
(b) using a diode, the diode including a first portion and a second portion, the second portion of the diode being in electrical contact with the first portion of the substrate, to bias the first portion of the substrate to a voltage different than a voltage of a second portion of the substrate thereby inducing a second capacitance, in series with the first capacitance, between the first portion of the substrate and the second portion of the substrate; and
(c) inducing a third capacitance, in series with the first capacitance and the second capacitance, between the first portion of the substrate and the third portion of the substrate.
18. The method of claim 17 , further comprising:
(c) inducing a third capacitance, in series with the first capacitance and the second capacitance, between a concentration of dopants of a first type and a concentration of dopants of a second type, the dopants of the first type being different from the dopants of the second type.
19. The method of claim 17 , further comprising:
(c) inducing a third capacitance, in series with the first capacitance and the second capacitance, between an NWELL and a PWELL.
20. An apparatus for reducing a parasitic capacitance in an integrated circuit, comprising:
a substrate, upon which the integrated circuit is disposed, having a first capacitance between a first portion of the substrate and an element of the integrated circuit; and
a diode, including a first portion and a second portion, the second portion of the diode being in electrical contact with the first portion of the substrate, configured to bias the first portion of the substrate to a voltage different than a voltage of a second portion of the substrate to induce a second capacitance between the first portion of the substrate and the second portion of the substrate,
wherein the first portion of the substrate is layered with a field oxide layer, the field oxide layer having a hole therein whereat at least some of the diode is formed.
21. The apparatus of claim 20 , wherein at least some of the second portion of the diode is formed within the first portion of the substrate and at least some of the first portion of the diode is formed within the hole.