Method of forming fine pattern, liquid crystal device having a fine pattern and fabricating method thereof

1. A method of forming fine pattern, comprising:

forming a photo-resist pattern on a conductive layer, the photo-resist pattern having a minimum line width corresponding to an exposure resolution of an exposure device; and

over-etching the conductive layer by an etching process using the photo-resist pattern as a mask to form an electrode pattern having a line width narrower than the exposure resolution of the exposure device,

wherein the step of over-etching the conductive layer performs etching so that a etching CD (Critical Dimension) bias between the photo-resist pattern and the electrode pattern is approximately 0.4˜3 μm,

wherein a temperature of the etching process is between about 50° C. and about 70° C., and

wherein an etching process time is between about 100 seconds and about 300 seconds.

2. The method as claimed in claim 1 , wherein the electrode pattern has an approximately 1˜3.5 μm line width.

3. The method as claimed in claim 1 , wherein the conductive layer includes a transparent conductive layer.

4. The method as claimed in claim 1 , wherein the conductive layer includes ITO.

5. The method as claimed in claim 1 , wherein the conductive layer includes at least one of a common electrode and a pixel electrode formed in the electrode pattern with an approximately 1˜1.6 μm line width.

6. The method as claimed in claim 1 , wherein an etchant for etching the conductive layer includes an oxalic acid of 2 wt %˜10 wt % and a surfactant.

7. The method as claimed in claim 6 , wherein the etchant is provided in a spray mode.

8. A method of fabricating a liquid crystal display device,

forming a conductive layer;

forming a photo-resist pattern on the conductive layer, the photo-resist pattern including a portion having a minimum line width corresponding to an exposure resolution of an exposure device; and

over-etching the conductive layer by an etching process using the photo-resist pattern as a mask to form an electrode pattern having a line width narrower than the exposure resolution of the exposure device,

wherein the step of over-etching the conductive layer performs etching so that a etching CD (Critical Dimension) bias between the photo-resist pattern and the electrode pattern is an approximately 0.4˜3 μm,

wherein a temperature of the etching process is between about 50° C. and about 70° C., and

wherein an etching process time is between about 100 seconds and about 300 seconds.

9. The method as claimed in claim 8 , wherein the electrode pattern has an approximately 1˜3.5 μm line width.

10. The method as claimed in claim 8 , wherein the conductive layer includes a transparent conductive layer.

11. The method as claimed in claim 10 , wherein the conductive layer includes ITO.

12. The method as claimed in claim 8 , wherein an etchant for etching the conductive layer includes an oxalic acid of 2 wt %˜10 wt % and a surfactant.

13. The method as claimed in claim 12 , wherein the etchant is provided in a spray mode.

14. The method as claimed in claim 8 , wherein the conductive layer includes at least one of a common electrode and a pixel electrode formed in the electrode pattern with an approximately 1˜1.6 μm line width.

15. The method as claimed in claim 14 , wherein the common electrode and the pixel electrode form a horizontal electric field.