In-line processing for forming a silicon nitride film
View Patent ↗A process for manufacturing semiconductor devices in an in-line processing includes the steps of: forming a silicon nitride film on a semiconductor wafer by nitrization in a reactor chamber having an inner pressure at a specific pressure; reducing the inner pressure from the specific pressure; raising the inner pressure up to the specific pressure; replacing the semiconductor wafer with another semiconductor wafer; and forming a nitride film on the another semiconductor wafer at the specific pressure.
1. A method of manufacturing semiconductor devices in an in-line processing comprising, between forming a silicon nitride film by using nitrification on a first semiconductor wafer in a reactor chamber having an inner pressure at a specific pressure and forming a silicon nitride film by using nitrification on a second semiconductor wafer in said reactor chamber at said specific pressure
reducing said inner pressure from said specific pressure;
raising said inner pressure up to said specific pressure; and
replacing said first semiconductor wafer with said second semiconductor wafer.
2. The method according to claim 1 , wherein said reducing includes:
providing non-reactive gas in said reactor chamber to purge internal gas in said reactor chamber; and
evacuating said internal gas from said reactor chamber.
3. The method according to claim 1 , wherein said reducing includes:
evacuating internal gas from said reactor chamber; and
providing non-reactive gas in said reactor chamber to purge the internal gas in said reactor chamber.
4. The method according to claim 1 , wherein said reducing includes:
providing non-reactive gas in said reactor chamber to purge internal gas in said reactor chamber.
5. The method according to claim 1 , wherein said forming includes nitriding a silicon film by using a rapid thermal nitriding process.
6. The method according to claim 1 , wherein said reducing includes setting said inner pressure at 600 Torr or lower.