Structure of sweep-type fingerprint sensing chip capable of resisting electrostatic discharge (ESD) and method of fabricating the same
A structure of sweep-type fingerprint sensing chip capable of resisting electrostatic discharge (ESD) includes a semiconductor substrate, and a sweep-type fingerprint sensing chip formed on the semiconductor substrate, a polymer layer and a conducting metal layer. The sweep-type fingerprint sensing chip includes a sensing array region and a peripheral circuit region. The sensing array region has an exposed area for sensing a plurality of fingerprint fragment images as a finger sweeps thereacross. The peripheral circuit region, which is formed on the substrate and located around the sensing array region, controls an operation of the sensing array region. The polymer layer is disposed on the peripheral circuit region and has a flat and smooth outer surface. The conducting metal layer is disposed on the flat and smooth outer surface of the polymer layer. The conducting metal layer discharges the approaching electrostatic charges to the ground to avoid damaging of the sensing chip.
1. A fingerprint chip structure, comprising:
a semiconductor substrate;
a fingerprint sensing chip, which is formed on the semiconductor substrate and comprises:
a sensing array region having an exposed fingerprint sensing area for sensing a plurality of fingerprint fragment images of a finger as the finger sweeps across the sensing array region; and
a peripheral circuit region, which is formed on the semiconductor substrate and located aside the sensing array region, for controlling an operation of the sensing array region;
a polymer layer, which is disposed on the peripheral circuit region and has a flat and smooth outer surface; and
a conducting metal layer, which is disposed on the flat and smooth outer surface of the polymer layer, for discharging electrostatic charges, wherein a thickness of the conducting metal layer is substantially greater than 1 micron.
2. The structure according to claim 1 , wherein the polymer layer is made of polyimide, benzocyclobutene (BCB) or SU-8.
3. The structure according to claim 1 , wherein a thickness of the polymer layer is substantially greater than 2 microns.
4. The structure according to claim 1 , wherein a thickness of the polymer layer substantially ranges from 2 microns to 5 microns.
5. The structure according to claim 1 , wherein the conducting metal layer is made of aluminum or gold.
6. A method of manufacturing a fingerprint chip structure, the method comprising the steps of:
(a) forming a fingerprint sensing chip on a semiconductor substrate, wherein the fingerprint sensing chip comprises: a sensing array region having an exposed fingerprint sensing area for sensing a plurality of fingerprint fragment of a finger as the finger sweeps across the sensing array region and a peripheral circuit region, which is formed on the semiconductor substrate and located aside the sensing array region, for controlling an operation of the sensing array region;
(b) forming a polymer layer on the peripheral circuit region, the polymer layer having a flat and smooth outer surface; and
(c) forming a conducting metal layer for discharging electrostatic charges on the flat and smooth outer surface of the polymer layer, wherein a thickness of the conducting metal layer is substantially greater than 1 micron.
7. The method according to claim 6 , wherein the step (b) comprises the sub-steps of:
(b1) spin coating a polymeric material on the fingerprint sensing chip;
(b2) curing the polymeric material to form the polymer layer having the flat and smooth outer surface; and
(b3) partially removing the polymer layer to expose the fingerprint sensing area.
8. The method according to claim 6 , wherein the polymer layer is made of polyimide, benzocyclobutene (BCB) or SU-8.
9. The method according to claim 6 , wherein a thickness of the polymer layer is substantially greater than 2 microns.
10. The method according to claim 6 , wherein a thickness of the polymer layer substantially ranges from 2 microns to 5 microns.
11. The method according to claim 6 , wherein the conducting metal layer is made of aluminum or gold.
12. The method according to claim 6 , wherein the step (c) comprises the sub-steps of:
(c1) depositing a metal layer on the flat and smooth outer surface of the polymer layer and the fingerprint sensing area; and
(c2) partially removing the metal layer located on the fingerprint sensing area to remain the residual metal layer as the conducting metal layer for discharging the electrostatic charges.