Organic and inorganic hybrid photoelectric conversion device

1. A photoelectric conversion device comprising:

an inorganic photoelectric conversion film;

an insulating film; and

an organic photoelectric conversion film held between two transparent electroconductive films, in this order,

and further comprising a signal readout section having a MOS structure,

wherein:

the insulating film has a thickness of from 1 to 6 μm;

at least one of the two transparent electroconductive films has a thickness of from 5 to 50 nm and comprises an electroconductive metallic oxide

the inorganic photoelectric conversion film performs photoelectric conversion of at least blue light and red light;

the organic photoelectric conversion film performs photoelectric conversion of at least green light;

the number of pixels for green light is larger than the number of pixels for blue light or red light;

one of the two transparent electroconductive films nearer the inorganic photoelectric conversion film forms a pixel electrode;

one of the two transparent electroconductive films farther from the inorganic photoelectric conversion film forms a common electrode, and;

the organic photoelectric conversion film is formed continuously without separation for each pixel.

2. The photoelectric conversion device according to claim 1 ,

wherein the inorganic photoelectric conversion film comprises a silicon semiconductor, and the inorganic photoelectric conversion film performs photoelectric conversion of at least blue light and red light separately in a depth direction of the silicon semiconductor.

3. The photoelectric conversion device according to claim 1 ,

wherein the organic photoelectric conversion film performing photoelectric conversion of green light has a maximum absorption wavelength of from 510 to 560 nm, a maximum absorptivity of from 80 to 100% and a half value width of absorptivity of from 50 to 100 nm.

4. The photoelectric conversion device according to claim 1 , which further comprises a protective film having a multilayer structure comprising three or more layers directly or indirectly on one of the two transparent electroconductive films farther from the inorganic photoelectric conversion film.

5. The photoelectric conversion device according to claim 1 ,

wherein the organic photoelectric conversion film has a surface smoothness that is 1/10 or less of a thickness of the organic photoelectric conversion film.

6. The photoelectric conversion device according to claim 4 , which further comprises at least one film selected from an antireflection film, an infrared ray shielding film and an ultraviolet ray shielding film directly or indirectly on the protective film.

7. The photoelectric conversion device according to claim 1 , which further comprises at least one color reproduction compensating layer at least one of above and under the organic photoelectric conversion film.

8. The photoelectric conversion device according to claim 1 ,

wherein the signal readout section utilizes an electron as a readout signal.

9. The photoelectric conversion device according to claim 1 ,

wherein the signal readout section utilizes a positive hole as a readout signal.

10. An imaging device comprising a photoelectric conversion device according to claim 1 .

11. The photoelectric conversion device according to claim 7 , which comprises a color reproduction compensating layer provided above and/or under the organic photoelectric conversion film performing photoelectric conversion of green light.