Static, low-voltage fuse-based cell with high-voltage programming

1. A fuse-based cell, comprising:

a fuse;

a high supply voltage, a low supply voltage and a programming voltage, wherein the programming voltage is greater than the supply voltage;

a programming device coupled to the fuse to program the fuse using the programming voltage;

a sense device coupled to the fuse to sense a programming state of the fuse;

a switch coupled to the sense device; and

a load coupled to the switch,

wherein the switch isolates the load and the sense device from exposure to a full potential difference between the programming voltage and the low supply voltage during a programming event.

2. The fuse-based cell of claim 1 , wherein the load sets a read current to determine a state of the fuse.

3. The fuse-based cell of claim 1 , wherein the fuse is coupled to a high-voltage source.

4. The fuse-based cell of claim 1 , wherein the fuse-based cell comprises a differential fused based circuit.

5. A fuse-based cell, comprising:

a fuse;

a high supply voltage, a low supply voltage and a programming voltage, wherein the programming voltage is greater than the supply voltage;

a programming device coupled to the fuse to program the fuse using the programming voltage;

a sense device coupled to the fuse to sense a programming state of the fuse;

a switch coupled to the sense device;

a load coupled to the switch; and

a pass device coupled to the sense device to control voltages across the sense device during sensing.

6. The fuse-based cell of claim 5 , wherein the switch comprises high voltage devices.

7. The fuse-based cell of claim 5 , wherein the switch comprises a first VDNMOS transistor and a second VDNMOS transistor.

8. The fuse-based cell of claim 7 , wherein the load comprises:

a first NMOS transistor coupled to the first VDNMOS transistor; and

a second NMOS transistor coupled to the second VDNMOS transistor.

9. The fuse-based cell of claim 5 , wherein the fuse is coupled to a high-voltage source.

10. The fuse-based cell of claim 5 , wherein the fuse-based cell comprises a differential fused based circuit.

11. The fuse-based cell of claim 5 , wherein the load sets a read current to determine a state of the fuse.

12. A fuse-based cell, comprising:

a fuse;

a high supply voltage, a low supply voltage and a programming voltage, wherein the programming voltage is greater than the supply voltage;

a programming device coupled to the fuse to program the fuse using the programming voltage;

a sense device coupled to the fuse to sense a programming state of the fuse;

a switch coupled to the sense device; and

a load coupled to the switch,

wherein the fuse-based cell comprises a nondifferential fused based circuit.

13. The fuse-based cell of claim 12 , wherein the load sets a read current to determine a state of the fuse.

14. The fuse-based cell of claim 12 , wherein the fuse is coupled to a high-voltage source.

15. The fuse-based cell of claim 12 , wherein the fuse-based cell comprises a differential fused based circuit.

16. An apparatus, comprising:

a supply voltage;

means for programming a fuse with a programming voltage being greater than the supply voltage;

means for sensing a programmed state of the fuse;

means for providing bias current to the means for sensing; and

means for isolating the means for sensing, from exposure to a full potential difference between the supply voltage and the programming voltage during programming,

wherein the means for isolating is separate from the means for providing bias current.

17. The apparatus of claim 16 , wherein the means for isolating further comprises means for isolating the means for providing bias current from the programming voltage.

18. A method, comprising:

programming a fuse to have a programmed state using a programming voltage that is greater than a supply voltage;

sensing the programmed state of the fuse using a sense device;

providing bias current to the sense device using a load;

isolating the sense device and the load from exposure to a full potential difference between the supply voltage and the programming voltage during the programming of the fuse.

19. The method of claim 18 , wherein the isolating comprises electrically decoupling the sense device and the load using a switch.

20. The method of claim 18 , wherein the programming voltage is approximately twice that of the supply voltage.

21. The method of claim 18 , wherein the switch comprises VDNMOS transistors.

22. The method of claim 21 , wherein the load comprises NMOS transistors.