Power semiconductor device with current sense capability
View Patent ↗A power semiconductor device includes a power device and a current sense device formed in a common semiconductor region.
1. A power semiconductor device comprising:
a power device formed in a semiconductor region of one conductivity;
a current sense device formed in said semiconductor region, said current sense device including,
a plurality of active cells each including a base region of another conductivity formed in said semiconductor region, and a conductive region of said one conductivity formed in each said base region spaced from said semiconductor region of said one conductivity by an invertible region of said another conductivity;
a transistor gate adjacent said invertible region;
a plurality inactive cells of said another conductivity disposed at the outer boundary of said active region; and
a first power electrode in electrical contact with said conductive region of said one conductivity;
wherein said transistor gate extends over at least a portion of a respective inactive cell, said transistor gate including a gate electrode which is shorted to said first power electrode, wherein said active cells are a plurality of spaced stripes arranged in a row and said inactive cells include a first stripe shaped region of said another conductivity adjacent a first one of said active cells and a second stripe shaped region adjacent a last one of said active cells.
2. The power semiconductor device of claim 1 , wherein said power device is a MOSFET.
3. The power semiconductor device of claim 1 , wherein said power device is an IGBT.
4. The power semiconductor device of claim 1 , wherein a conductive region of said one conductivity are source regions.
5. The power semiconductor device of claim 1 , wherein said transistor gate extends over at least a portion of a respective inactive cell, said transistor gate including a gate electrode having a conductivity as said inactive cell.
6. A power semiconductor device comprising:
a power device formed in a semiconductor region of one conductivity;
a current sense device formed in said semiconductor region, said current sense device including,
an active region having a plurality of active cells, each active cell including a base region of another conductivity formed in said semiconductor region, and a conductive region of said one conductivity formed in each said base region spaced from said semiconductor region of said one conductivity by an invertible region of said another conductivity;
a transistor gate adjacent said invertible region; and
a plurality of inactive cells of said another conductivity disposed at the outer boundary of said active region;
wherein said active cells are a plurality of spaced stripes arranged in a row and said inactive cells include a first stripe shaped region of said another conductivity adjacent a first one of said active cells and a second stripe shaped region adjacent a last one of said active cells.
7. The power semiconductor device of claim 6 , wherein said power device is a MOSFET.
8. The power semiconductor device of claim 6 , wherein said power device is an IGBT.
9. The power semiconductor device of claim 6 , wherein said invertible region is horizontally oriented.
10. The power semiconductor device of claim 6 , wherein said conductive region of said one conductivity is a source region.
11. The power semiconductor device of claim 6 , further comprising a semiconductor substrate of said one conductivity, said semiconductor region being disposed on said semiconductor substrate and further comprising a second power electrode in electrical contact with said substrate.
12. The power semiconductor device of claim 11 , wherein said first power electrode is a source sense electrode and said second power electrode is a drain electrode of said power device and said current sense device.
13. The power semiconductor device of claim 6 , wherein said semiconductor region serves as a common conduction region for said power device and said current sense device.
14. The power semiconductor device of claim 6 , wherein said transistor gate extends over at least a portion of a respective inactive cell, said transistor gate including a gate electrode having a same conductivity as said inactive cell.
15. The power semiconductor device of claim 6 , wherein at least one of said inactive cells is shorted to an active cell through a region of said another conductivity.
16. A power semiconductor device comprising:
a power device formed in a semiconductor region of one conductivity;
a current sense device including an active region having a plurality of active cells, each active cell including a base region of an opposite conductivity formed in said semiconductor region, and a conductive region of said one conductivity formed in each said base region spaced apart by an invertible region of said opposite conductivity;
a transistor gate adjacent said invertible region; and
a plurality of inactive cells of said opposite conductivity disposed in said active region;
wherein said active cells are a plurality of spaced stripes arranged in a row and said inactive cells include a first stripe shaped region of said opposite conductivity.
17. The power semiconductor device of claim 16 , wherein said power device is a MOSFET.
18. The power semiconductor device of claim 16 , wherein said power device is an IGBT.
19. The power semiconductor device of claim 16 , wherein said invertible region is horizontally oriented.
20. The power semiconductor device of claim 16 , wherein said conductive region of said one conductivity is a source region.