Thin film transistor plate and method of fabricating the same
View Patent ↗A thin film transistor (TFT) plate having improved processing efficiency without degradation in performance and a method of fabricating the TFT plate are provided. The TFT plate includes gate insulating layer patterns made of dual layers. Upper portions of both sidewalls of an upper gate insulating layer pattern are substantially aligned with both sidewalls of a gate electrode. Lower portions of both sidewalls of the upper gate insulating layer pattern are substantially aligned with a boundary portion between a lightly doped region and a source region and a boundary portion between the lightly doped region and a drain region. Thus, the concentration of the lightly doped region under a lower gate insulating layer pattern gradually changes.
1. A thin film transistor (TFT) plate, comprising:
a substrate;
a semiconductor layer formed on the substrate and including a lightly doped region adjacent to both sides of a channel region, and a source region and a drain region adjacent to the lightly doped region;
a gate electrode formed on the channel region of the semiconductor layer;
a first gate insulating layer formed between the semiconductor layer and the gate electrode;
a second gate insulating layer formed between the first gate insulating layer and the gate electrode and having sidewalls with upper portions having boundaries that are substantially aligned with the gate electrode and lower portions having boundaries that are substantially aligned with a boundary portion between the lightly doped region and the source region and a boundary portion between the lightly doped region and the drain region;
an interlayer insulating layer formed on the gate electrode, the first gate insulating layer, and the second gate insulating layer; and
a source electrode and a drain electrode formed on the interlayer insulating layer, the source electrode electrically connected to the source region through a first contact hole and the drain electrode electrically connected to the drain region through a second contact hole,
wherein boundaries of lower portions of sidewalls of the gate electrode completely contact boundaries of the upper portions of the sidewalls of the second gate insulating layer.
2. The TFT plate of claim 1 , wherein sidewalls of the first gate insulating layer are substantially aligned with lower portions of the sidewalls of the second gate insulating layer.
3. The TFT plate of claim 1 , wherein the first gate insulating layer has sidewalls that are substantially aligned with a boundary portion between the lightly doped region and the source region and a boundary portion between the lightly doped region and the drain region.
4. The TFT plate of claim 1 , wherein the first gate insulating layer is comprised of silicon oxide and the second gate insulating layer is comprised of silicon nitride.
5. The TFT plate of claim 1 , wherein the concentration of impurity ions of the lightly doped region gradually increases towards the boundary portion between the lightly doped region and the channel region from the boundary portion between the lightly doped region and the source/drain region.
6. The TFT plate of claim 1 , wherein the first gate insulating layer and the inter layer insulating layer includes the first and second contact holes.
7. The TFT plate of claim 1 , further comprising a capping layer between the second gate insulating layer and the interlayer insulating layer.
8. The TFT plate of claim 7 , wherein the capping layer is comprised of one of silicon nitride and silicon oxide.
9. The TFT plate of claim 7 , wherein sidewalls of the first gate insulating layer are substantially aligned with the sidewalls of the second gate insulating layer.