High voltage solid electrolytic capacitors using conductive polymer slurries
View Patent ↗A method for forming a capacitor including forming an anode from a valve metal; forming an oxide on the anode to form an anodized anode; dipping the anodized anode into a slurry of conductive polymer; drying the intrinsically conductive polymer; and providing external terminations in electrical contact with the anode and the conductive polymer.
1. A method for forming a capacitor comprising:
forming an anode from a valve metal;
forming a dielectric on the anode to form a dielectric covered anode;
dipping said dielectric covered anode into a slurry of intrinsically conductive polymer;
drying said intrinsically conductive polymer; and
providing terminations in electrical contact with said anode and said intrinsically conductive polymer;
wherein said capacitor has a breakdown voltage of at least 60V.
2. The method for forming a capacitor of claim 1 wherein said intrinsically conductive polymer is selected from PEDOT, PANI, polypyrrole, polythiophene, and derivatives thereof.
3. The method for forming a capacitor of claim 1 further comprising prior to said dipping:
processing said dielectric covered anode in at least one in-situ polymerization cycl.
4. The method for forming a capacitor of claim 1 wherein said capacitor has a breakdown voltage from 60v to 120V.
5. The method for forming a capacitor of claim 1 wherein said capacitor has a breakdown voltage from 120V to 200V.
6. The method for forming a capacitor of claim 1 wherein said capacitor has an ESR no more than 500 mohms.
7. The method for forming a capacitor of claim 6 wherein said capacitor has a ESR from 20 mohms to 150 mohms.
8. The method for forming a capacitor of claim 6 wherein said capacitor has a ESR from 150 mohms to 500 mohms.
9. A method for forming a capacitor comprising:
forming an anode from a material selected from a valve metal and an oxide of a valve metal;
forming a dielectric on said anode to form a dielectric covered anode;
dipping said dielectric covered anode into a slurry of intrinsically conductive polymer;
drying said intrinsically conductive polymer; and
providing a first termination in electrical contact with said anode and a second termination in electrical contact with said intrinsically conductive polymer;
wherein said capacitor has a breakdown voltage of at least 60v.
10. The method for forming a capacitor of claim 9 wherein said material is selected from aluminum, titanium, niobium oxide and alloys thereof.
11. The method for forming a capacitor of claim 9 wherein said intrinsically conductive polymer is selected from PEDOT, PANT, polypyrrole, polythiophene, and derivatives thereof.
12. The method for forming a capacitor of claim 9 further comprising prior to said dipping:
processing said dielectric covered anode in at least one in-situ polymerization cycl.
13. The method for forming a capacitor of claim 9 wherein said capacitor has a breakdown voltage from 60V to 120V.
14. The method for forming a capacitor of claim 9 wherein said capacitor has a breakdown voltage from 120V to 200V.
15. The method for forming a capacitor of claim 9 wherein said capacitor has a ESR no more than 500 mohms.
16. The method for forming a capacitor of claim 15 wherein said capacitor has a ESR from 20 mohms to 150 mohms.
17. The method for forming a capacitor of claim 15 wherein said capacitor has a ESR from 150 mohms to 500 mohms.