Organic light emitting diode and organic electroluminescent device using the same
An organic light emitting diode comprises a transparent electrode, an organic emission layer, an anti-reflective electrode and an auxiliary electrode. The organic emission layer is disposed between the transparent electrode and the anti-reflective electrode. The anti-reflective electrode includes a first conductive layer, a second conductive layer, and a non-metal layer. The first conductive layer is disposed between the organic emission layer and the non-metal layer. The non-metal layer is interposed between the first conductive layer and the second conductive layer. The auxiliary electrode penetrates the non-metal layer to connect the first conductive layer with the second conductive layer. The organic light emitting diode can be applied to an organic electroluminescent device.
1. An organic light emitting diode, comprising:
a transparent electrode;
an organic emission layer disposed on the transparent electrode;
an anti-reflective electrode, having a first conductive layer, a second conductive layer, and a non-metal layer disposed between the first and second conductive layers, disposed on the organic emission layer, wherein the first conductive layer is disposed between the organic emission layer and the non-metal layer; and
an auxiliary electrode penetrating the non-metal layer to electrically connect the first conductive layer with the second conductive layer, wherein the height of the auxiliary electrode is larger than the total thickness of the organic emission layer, the first conductive layer and the non-metal layer.
2. The organic light emitting diode of claim 1 , wherein the auxiliary electrode is island-shaped.
3. The organic light emitting diode of claim 1 , wherein a sidewall and a bottom plane of the auxiliary electrode form an angle ranging from about 60 degree to about 90 degree.
4. The organic light emitting diode of claim 1 , wherein the non-metal layer is a semiconductor layer or a metal oxide layer.
5. An organic electroluminescent device, comprising:
a transparent substrate;
a transparent electrode disposed on the transparent substrate;
an organic emission layer disposed on the transparent electrode;
an anti-reflective electrode, having a first conductive layer, a second conductive layer, and a non-metal layer disposed between the first and second conductive layers, disposed on the organic emission layer, wherein the first conductive layer is disposed between the organic emission layer and the non-metal layer;
an auxiliary electrode penetrating the non-metal layer to electrically connect the first conductive layer with the second conductive layer; and
a transistor electrically connected to the transparent electrode.
6. The organic electroluminescent device of claim 5 , wherein the auxiliary electrode is formed as island-shaped.
7. The organic electroluminescent device of claim 6 , wherein the auxiliary electrode tapers from bottom to top.
8. The organic electroluminescent device of claim 5 , wherein a sidewall and a bottom plane of the auxiliary electrode form an angle ranging from about 60 degree to about 90 degree.
9. The organic electroluminescent device of claim 5 , wherein the height of the auxiliary electrode is larger than the total thickness of the organic emission layer, the first conductive layer and the non-metal layer.
10. The organic electroluminescent device of claim 5 , further including a flat layer formed on the transistor, wherein the auxiliary electrode and the transparent electrode are both formed on the flat layer.
11. The organic electroluminescent device of claim 5 , further comprising a plurality of circuits disposed on the transparent substrate so as to define a non-transparent region, wherein the auxiliary electrode is located on the circuits in the non-transparent region.
12. A method of producing an organic electroluminescent device, comprising:
providing a transparent substrate with a transistor;
forming a transparent electrode on the transparent substrate to electrically connect to the transistor; forming a cap pattern to define a transparent region on a part of the transparent electrode and a non-transparent region on the transistor;
forming an auxiliary electrode on the cap pattern in the non-transparent region;
forming an organic emission layer on the cap pattern, so that the organic emission layer has a thickness less than the height of the auxiliary electrode;
forming a first conductive layer on the organic emission layer to contact with the auxiliary electrode, so that the total thickness of the first conductive layer and the organic emission layer is less than the height of the auxiliary electrode;
forming a non-metal layer on the first conductive layer, wherein the total thickness of the non-metal layer, the first conductive layer and the organic emission layer is less than the height of the auxiliary electrode; and
forming a second conductive layer on the non-metal layer to contact with the auxiliary electrode.
13. The method of claim 12 , wherein the step of forming the auxiliary electrode comprising forming a plurality of metal layers on the cap pattern in the non-transparent region.