Flip-chip light emitting diode with a thermally stable multiple layer reflective p-type contact
View Patent ↗A p-type contact ( 30 ) is disclosed for flip chip bonding and electrically contacting a p-type group III-nitride layer ( 28 ) of a group III-nitride flip chip light emitting diode die ( 10 ) with a bonding pad ( 60 ). A first palladium layer ( 42 ) is disposed on the p-type group III-nitride layer ( 28 ). The first palladium layer ( 42 ) is diffused through a native oxide of the p-type group III-nitride layer ( 28 ) to make electrical contact with the p-type group III-nitride layer ( 28 ). A reflective silver layer ( 44 ) is disposed on the first palladium layer ( 42 ). A second palladium layer ( 46 ) is disposed on the silver layer ( 44 ). A bonding stack ( 48 ) including at least two layers ( 50, 52, 54 ) is disposed on the second palladium layer ( 46 ). The bonding stack ( 48 ) is adapted for flip chip bonding the p-type layer ( 28 ) to the bonding pad ( 60 ).
1. A p-type contact for bonding and electrically contacting a p-type group III-nitride layer with a bonding pad, the p-type contact including:
a first palladium layer disposed on the p-type group III-nitride layer, the first palladium layer being diffused through a native oxide of the p-type group III-nitride layer to make electrical contact with the p-type group III-nitride layer;
a reflective silver layer disposed on the first palladium layer;
a second palladium layer disposed on the silver layer; and
a bonding stack including at least three layers disposed on the second palladium layer, the bonding stack being adapted for bonding the p-type layer to the bonding pad.
2. The p-type contact as set forth in claim 1 , wherein the first palladium layer is substantially unreacted with the p-type group III-nitride layer.
3. The p-type contact as set forth in claim 1 , wherein interfaces between the first palladium layer and the silver layer and between the silver layer and the second palladium layer are chemically abrupt.
4. The p-type contact as set forth in claim 1 , wherein the first palladium layer has a thickness between about 5 nanometers and about 20 nanometers inclusive.
5. The p-type contact as set forth in claim 1 , wherein an interface between the first palladium layer and the p-type group III-nitride layer is thermally stable at temperatures of at least as high as 300° C.
6. A flip chip light emitting device die including:
a plurality of semiconductor layers including a p-type group III-nitride layer; and
a p-electrode formed on the p-type group III-nitride layer for electrically contacting a bonding pad of an associated mount, the p-electrode including:
a palladium oxide diffusion layer disposed on the p-type group III-nitride layer,
a reflective silver layer disposed on the palladium oxide diffusion layer, the reflective silver layer being highly reflective for light generated by the semiconductor layers,
a migration-suppressing palladium layer disposed on the reflective silver layer, and
a bonding stack including at least three layers disposed on the migration-suppressing palladium layer, the bonding stack being adapted for flip chip bonding the flip chip light emitting device die to bonding pads.
7. The flip chip light emitting device die as set forth in claim 6 , wherein the palladium oxide diffusion layer is substantially unreacted with the p-type group III-nitride layer.
8. The flip chip light emitting device die as set forth in claim 6 , wherein the palladium oxide diffusion layer has a thickness between about 5 nanometers and about 20 nanometers inclusive.
9. The flip chip light emitting device die as set forth in claim 6 , wherein the palladium oxide diffusion layer and the reflective silver layer have a substantially chemically abrupt interface therebetween.
10. The flip chip light emitting device die as set forth in claim 6 , wherein the palladium oxide diffusion layer prevents intermixing between the reflective silver layer and the p-type group III-nitride layer.
11. The flip chip light emitting device die as set forth in claim 6 , wherein the p-electrode is thermally stable at temperatures of at least as high as 300° C.