IP Library Granted Patent US 7,561,220
Granted Patent B2
US 7,561,220 · App. 11/482,425 · Granted Jul 14, 2009

Electro-optical device and manufacturing method thereof, electronic apparatus, and capacitor

Assignee: Seiko Epson Corporation
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Quick Facts
Patent No.
US 7,561,220
App. No.
11/482,425
Granted
Jul 14, 2009
Kind
B2
Abstract

An electro-optical device includes, on a substrate, a plurality of scanning lines and a plurality of data lines which intersect one another, a plurality of pixel electrodes provided corresponding to the intersections of the plurality of scanning lines and the plurality of data lines, a storage capacitor in which a pair of electrodes, and a dielectric film are laminated, a sidewall made of a first insulating film provided on an inner wall of an opening which is opened through one of the pair of electrodes and the dielectric film, and a first conductive film which is arranged opposite to one of the pair of electrodes as viewed from the other of the pair of electrodes, and electrically connected to the other of the pair of electrodes via a self-alignment contact hole which is formed in a self-alignment manner simultaneously with the sidewall and surrounded by the sidewall.

Claims (17)

1. An electro-optical device comprising, on a substrate:

a scanning line;

a data line intersecting the scanning line;

a pixel electrode provided corresponding to the intersection of the scanning line and the data line;

a storage capacitor including a first electrode, a second electrode, and a dielectric film between the first and second electrodes, an opening being formed through the first electrode and the dielectric film;

a sidewall made of a first insulating film provided on an inner wall of the opening through the first electrode and the dielectric film; and

a first conductive film which is arranged on the opposite side of the first electrode as viewed from the second electrode and which is electrically connected to the second electrode via a self-alignment contact hole defined by an inner surface of the sidewall.

2. The electro-optical device according to claim 1 , wherein the storage capacitor is configured such that a pixel-potential-side electrode electrically connected to the pixel electrode and a fixed-potential-side electrode connected electrically to a constant potential, serving as the second electrode and the first electrode, respectively, are laminated.

3. The electro-optical device according to claim 1 , wherein the pixel electrode extends from the first conductive film, the storage capacitor is configured such that the second electrode, the dielectric film, and the first electrode are laminated in this order, and the second electrode is electrically connected to the pixel electrode electrically via the self-alignment contact hole which is bored through the first electrode.

4. An electronic apparatus comprising the electro-optical device according to claim 1 .

5. A method of manufacturing an electro-optical device including, on a substrate, a plurality of scanning lines and a plurality of data lines which intersect one another, a plurality of pixel electrodes provided corresponding to the intersections of the plurality of scanning lines and the plurality of data lines, and storage capacitors which are electrically connected to the plurality of pixel electrodes, the method comprising:

forming the storage capacitors such that a pixel-potential-side electrode, a dielectric film, and a fixed-potential-side electrode are laminated in this order;

forming an interlayer insulating film on the storage capacitor;

forming an opening which is bored through the fixed-potential-side electrode, the dielectric film, and the interlayer insulating film such that the pixel-potential-side electrode is exposed;

laminating a first insulating film in a region including the opening, as seen in plan view, on the substrate;

boring a self-alignment contact hole surrounded by a sidewall such that the pixel-potential-side electrode is exposed, while the sidewall made of the first insulating film is formed on the inner wall of the opening, by performing anisotropic etching on the first insulating film; and

forming the pixel electrodes by laminating the first insulating film in the region including the self-alignment contact hole, as seen in plan view, on the substrate such that the first conductive film is electrically connected to the pixel-potential-side electrode via the self-alignment contact hole.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 28, 2019
From: SEIKO EPSON CORPORATION
To: 138 EAST LCD ADVANCEMENTS LIMITED
Reel/Frame 050197/0212 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 7, 2006
From: ISHII, TATSUYA
To: SEIKO EPSON CORPORATION
Reel/Frame 018051/0190 →
Priority Claims (1)
JP 2005-268606 · Sep 15, 2005 · national
Continuity (1)
Related Publication 20070058100A1 · Mar 15, 2007