Photoresist composition, method for forming film pattern using the same, and method for manufacturing thin film transistor array panel using the same

1. A manufacturing method of a thin film transistor array panel, the method comprising:

forming a gate line on a substrate;

depositing a gate insulating layer, a semiconductor layer, and a data layer on the gate line;

depositing a photoresist film on the data layer, the photoresist film comprising an alkali-soluble resin and a photosensitive compound having a ballast structure expressed by Chemical Formula (I),

where R 1 and R 2 are alkyl groups, and R 1 and R 2 may be the same or different;

patterning the photoresist film to form a first photoresist;

etching the data layer using the photoresist pattern as an etching mask to form a data conductor;

etching the semiconductor layer using the data conductor as an etching mask;

applying heat-treatment for reflow to the photoresist pattern to form a second photoresist; and

etching the data conductor using the second photoresist as an etching mask.

2. The manufacturing method of a thin film transistor array panel of claim 1 , wherein the photosensitive compound comprises a diazide group.

3. The manufacturing method of a thin film transistor array panel of claim 1 , wherein the photosensitive compound comprises 2,2′-methylene bis[6-(2-hydroxy-5-methylphenyl)methyl]-4-methyl-1,2-naphtoquinonediazide-5-sulfonate.

4. The manufacturing method of a tin film transistor array panel of claim 3 , wherein the photoresist film further comprises an additive for modulating heat resistance comprising a compound selected from the group consisting of a first compound expressed by Chemical Formula (II) and a second compound expressed by Chemical Formula (III):

where R is a methyl group, an ethyl group, or a propyl group, R 1 is a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, or a hexyl group, and R 2 is hydrogen (H) or a methyl group).

5. The manufacturing method of a thin film transistor array panel of claim 1 , wherein applying heat-treatment to the photoresist pattern for reflow is performed at about 100° C. to about 150° C.

6. The manufacturing method of a thin film transistor array panel of claim 1 , wherein the second photoresist covers edges of the data conductor.

7. The manufacturing method of a thin film transistor array panel of claim 1 , further comprising:

performing an etch-back process after the etching of the semiconductor layer.

8. The manufacturing method of a thin film transistor array panel of claim 1 , wherein the photoresist pattern comprises a first portion and a second portion thinner than the first portion.

9. The manufacturing method of a thin film transistor array panel of claim 1 , wherein the patterning the photoresist film to form a photoresist pattern comprises:

light-exposing the photoresist film; and

developing the light-exposed photoresist film; wherein no heat-treatment occurs between the development of the light-exposed photoresist film and the etching of the data layer.

10. A manufacturing method of a thin film transistor array panel, the method comprising:

forming a gate line on a substrate;

depositing a gate insulating layer and a semiconductor layer;

depositing a data layer on the semiconductor layer;

depositing a photoresist film on the data layer;

light-exposing the photoresist film;

developing the photoresist film to form a photoresist having a first portion and a second portion having less thickness than the first portion;

first-etching the data layer using the patterned photoresist after the developing of the photoresist film;

etching the semiconductor layer using the first etched data layer as an etching mask;

applying heat-treatment for reflow to the photoresist; and

second-etching the data layer using the reflowing photoresist pattern as an etching mask,

wherein no heat treatment occurs between the developing the photoresist film and first-etching the data layer.

11. The manufacturing method of a thin film transistor array panel of claim 10 , wherein the photoresist film comprises a photosensitive compound having a ballast structure expressed by Chemical Formula (I):

where R 1 and R 2 are alkyl groups, and R 1 and R 2 may be the same or different.

12. The manufacturing method of a thin film transistor array panel of claim 10 , wherein the photoresist film comprises an additive for modulating heat resistance comprising a compound selected from the group consisting of a first compound expressed by Chemical Formula (II) and a second compound expressed by Chemical Formula (III);

where R is a methyl group, an ethyl group, or a propyl group, R 1 is a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, or a hexyl group, and R 2 is hydrogen (H) or a methyl group.