Semiconductor-on-insulator (SOI) structures including gradient nitrided buried oxide (BOX)
View Patent ↗A semiconductor-on-insulator structure includes a buried dielectric layer interposed between a base semiconductor substrate and a surface semiconductor layer. The buried dielectric layer comprises an oxide material that includes a nitrogen gradient that peaks at the interface of the buried dielectric layer with at least one of the base semiconductor substrate and surface semiconductor layer. The interface of the buried dielectric layer with the at least one of the base semiconductor substrate and surface semiconductor layer is abrupt, providing a transition in less than about 5 atomic layer thickness, and having less than about 10 angstroms RMS interfacial roughness. A second dielectric layer comprising an oxide dielectric material absent nitrogen may be located interposed between the buried dielectric layer and the surface semiconductor layer.
1. A method for fabricating a semiconductor-on-insulator structure comprising:
nitriding, while using a thermal nitriding method, an oxide layer located upon a base semiconductor substrate to provide a nitrided oxide layer having a first nitrogen gradient that peaks at an interface of the nitrided oxide layer with the base semiconductor substrate, said thermal nitriding method uses a nitriding material selected from the group consisting of a nitrogen nitriding material, a nitric oxide nitriding material and a nitrous oxide nitriding material and a thermal diffusion temperature from about 500 to about 1350 degrees centigrade;
nitriding, while using a plasma nitriding method, the nitrided oxide layer to provide a twice nitrided oxide layer having a second nitrogen gradient that peaks at the exposed surface of the twice nitrided oxide layer, said plasma nitriding method uses a nitriding material selected from the group consisting of a nitrogen nitriding material, a nitric oxide nitriding material and a nitrous oxide nitriding material; and
laminating a surface semiconductor layer upon the twice nitrided oxide layer to contact the second nitrogen gradient, wherein first nitrogen gradient and the second nitrogen gradient has a depth from about 20 to about 1000 angstroms within the twice nitrided oxide layer.