Light emitting device methods
Light-emitting device methods are disclosed.
1 . A method of making a light-emitting device, the method comprising:
disposing a planarization layer on a surface of a layer of semiconductor material;
disposing a lithography layer on a surface of the planarization layer; and
performing nanolithography to remove at least a portion of the planarization layer, at least a portion of the lithography layer and at least a portion of the layer of semiconductor material, thereby forming a dielectric function in the surface of the layer of semiconductor material that varies spatially according to a pattern.
2 . The method of claim 1 , wherein performing nanolithography includes forming indentations in the lithography layer.
3 . The method of claim 2 , further comprising heating the lithography layer while forming the indentations in the lithography layer.
4 . The method of claim 3 , wherein the lithography layer is cooled after forming the indentations.
5 . The method of claim 2 , further comprising UV-curing the lithography layer while forming the indentations in the lithography layer.
6 . The method of claim 2 , wherein the indentations from the lithography layer correspond to the portion of the lithography layer removed during nanolithography.
7 . The method of claim 1 , wherein the portion of the planarization layer removed during nanolithography corresponds to the portion of the lithography layer removed during nanolithography.
8 . The method of claim 7 , wherein the portion of the layer of semiconductor material removed during nanolithography corresponds to the portion of the planarization layer removed during nanolithography.
9 . The method of claim 8 , wherein the portion of the layer of semiconductor material removed during nanolithography forms the pattern in the surface of the layer of semiconductor material.
10 . The method of claim 1 , further comprising, after removing portions of the lithography and planarization layers, depositing a material on exposed portions of the layer of semiconductor material.
11 . The method of claim 10 , further comprising depositing the material on an exposed upper surface of the lithography layer.
12 . The method of claim 11 , further comprising removing the portions of lithography layer having the material deposited thereon.
13 . The method of claim 12 , further comprising removing the portions of the planarization layer corresponding to the portions of the lithography layer having the material deposited thereon.
14 . The method of claim 12 , further comprising removing portions of the layer of semiconductor material that do not have the material deposited thereon to form the pattern in the surface of the layer of semiconductor material.
15 . The method of claim 10 , wherein the material comprises a metal.
16 . The method of claim 15 , wherein the material comprises at least one metal selected from the group consisting of aluminum, nickel, titanium and tungsten.
17 . The method of claim 1 , wherein performing nanolithography includes forming indentations in the lithography layer, and the method further comprises coating at least some of the indentations in the lithography layer with an etch resistant material.
18 . The method of claim 17 , wherein the etch resistant material is disposed on the surface of the lithography layer, and the etch resistant material is then etched to expose an upper surface of the lithography layer while keeping some of the etch resistant material in the indentations in the lithography layer.
19 . The method of claim 18 , wherein the etch resistant material is spin coated onto the lithography layer.
20 - 60 . (canceled)
61 . A method of making a light-emitting device, the method comprising:
providing an article that comprises a layer of semiconductor material, and a planarization layer supported by the layer of semiconductor material; and
performing nanolithography to remove at least a portion of the planarization layer and at least a portion of the layer of semiconductor material, thereby forming a dielectric function in the surface of the layer of semiconductor material that varies spatially according to a pattern.
62 - 106 . (canceled)