Method for manufacturing capacitor for semiconductor device

1. A method for manufacturing a capacitor in a semiconductor device, comprising:

forming a lower electrode on a semiconductor substrate;

forming a dielectric layer on an entire surface of the semiconductor substrate, covering the lower electrode;

forming a first interlevel dielectric layer on the dielectric layer;

selectively removing the first interlevel dielectric layer to form an opening exposing a surface of the dielectric layer without exposing the lower electrode;

forming a conductive layer over the entire surface of the semiconductor substrate including the opening;

planarizing the conductive layer to form an upper electrode in the opening; and

forming a second interlevel dielectric layer over the entire surface of the semiconductor substrate including the upper electrode.

2. The method of claim 1 , wherein forming the second interlevel dielectric layer comprises forming a layer of USG (Undoped Silicate Glass).

3. The method of claim 1 , wherein forming the second interlevel dielectric layer comprises forming the second interlevel dielectric layer to a thickness of 300 Ř500 Å.

4. The method of claim 1 , wherein forming the conductive layer comprises forming a layer of material selected from a group consisting of aluminum (Al), copper (Cu), titanium/titanium nitride (Ti/TiN), platinum (Pt), tungsten (W), and alloy thereof.

5. The method of claim 1 , wherein forming the dielectric layer comprises forming a layer of material selected from a group of ONO (Oxide-Nitride-Oxide), NO (Nitride-Oxide), NON (Nitride-Oxide-Nitride), BST (BaSrTiO 3 ), PZT (PbZrTiO 3 ), Ta 2 O 3 , and silicon nitride.

6. The method of claim 1 , wherein planarizing the conductive layer comprises selectively polishing the conductive layer using a top surface of the first interlevel dielectric layer as an end point.