Optoelectronic chip
View Patent ↗An optoelectronic chip having a semiconductor body ( 14 ), which contains a radiation-emitting region ( 2 ), and a partial region ( 3 ) in which the surface ( 13 ) of the semiconductor body ( 14 ) is curved convexly toward a carrier ( 10 ). The lateral extent ( 2 r ) of the radiation-emitting region ( 2 ) is less than the lateral extent ( 2 R) of the partial region ( 3 ). A method for producing such a chip is also described.
1. An optoelectronic chip comprising:
a semiconductor body with a radiation-emitting region; and
a partial region forming part of the semiconductor body and including a surface of the semiconductor body curved convexly toward a carrier, the partial region comprising a semiconductor material;
wherein a lateral extent of the radiation-emitting region is less than a lateral extent of the partial region, and
wherein at least one part of the radiation-emitting region is arranged at a midpoint of a sphere which is formed by patterning a surface of the semiconductor body facing the carrier and remote from the carrier.
2. The optoelectronic chip as claimed in claim 1 , in which at least one reflective layer is arranged between the semiconductor body and the carrier.
3. The optoelectronic chip as claimed in claim 2 , in which the reflective layer covers the partial region at least in places.
4. The optoelectronic chip as claimed in claim 1 , in which the semiconductor body has a multiplicity of radiation-emitting regions.
5. The optoelectronic chip as claimed in claim 4 , in which the semiconductor body has a multiplicity of partial regions, each of which is assigned to one of the radiation-emitting regions.
6. The optoelectronic chip as claimed in claim 5 , in which each of the multiplicity of partial regions is assigned one-to-one to each of the radiation-emitting regions.
7. The optoelectronic chip as claimed in claim 1 , in which the partial region forms a concave mirror for an electromagnetic radiation generated by the radiation-emitting region.
8. The optoelectronic chip as claimed in claim 7 , in which the radiation-emitting region is arranged, at least in places, in a focal plane of the concave mirror.
9. The optoelectronic chip as claimed in claim 1 , in which the partial region has a parabolic curvature.
10. The optoelectronic chip as claimed claim 1 , in which the partial region has a spherical curvature.
11. The optoelectronic chip as claimed in claim 1 , in which the partial region has an aspherical curvature.
12. The optoelectronic chip as claimed in claim 1 , in which a surface of the semiconductor body that is remote from the carrier has a region that is patterned in such a way that it forms a lens for an electromagnetic radiation generated by the radiation-emitting region.
13. The optoelectronic chip as claimed in claim 12 , in which the lateral extent of the radiation-emitting region is less than a lateral extent of the lens.
14. The optoelectronic chip as claimed in claim 12 , in which a plurality of lenses are formed, the semiconductor body has a plurality of radiation-emitting regions, and precisely one of the lenses is assigned to each of the radiation-emitting regions.
15. The optoelectronic chip as claimed in claim 14 , in which each of the lenses is assigned one-to-one to each of the radiation-emitting regions.
16. The optoelectronic chip as claimed in claim 12 , in which the lens is formed by a region of a surface of the semiconductor body that is curved convexly away from the carrier.
17. The optoelectronic chip as claimed in claim 16 , in which the region of the surface of the semiconductor body that is curved convexly away from the carrier has a spherical curvature.
18. The optoelectronic chip as claimed in claim 16 , in which the region of the surface of the semiconductor body that is curved convexly away from the carrier has an aspherical curvature.
19. The optoelectronic chip as claimed in claim 1 , in which a surface of the semiconductor body that faces the carrier and a surface of the semiconductor body that is remote from the carrier have etched curved structures.
20. The optoelectronic chip as claimed in claim 1 , in which a thickness of the semiconductor body is a maximum of 10 μm at its thinnest location.
21. The optoelectronic chip as claimed in claim 1 , in which the semiconductor body is formed in AlGaAs/AlGaInP material system and the partial region is formed in AlGaAs material system.
22. The optoelectronic chip as claimed in claim 1 , in which the semiconductor body is formed in AlGaAs/AlGaInP material system.
23. The optoelectronic chip as claimed in claim 1 , in which the partial region is formed in AlGaAs material system.