Liquid crystal display comprising light sensing TFT having opening in gate electrode
View Patent ↗There are provided a TFT, a TFT substrate using the TFT, a method of fabricating the TFT substrate, and an LCD. The TFT includes a source region, a drain region, and a gate electrode having an opening. The opening of the gate electrode is to enhance the light sensing ability of the TFT when it is used as a light sensor, since light is incident into a region where the opening is formed. The TFT including the gate having the opening can be used in a substrate of a flat display or an LCD using such a substrate. The above TFT can sense light incident from outside the display to adjust the brightness of the screen according to the external illumination.
1. A TFT comprising:
a source region and a drain region formed spaced apart from each other in a semiconductor layer;
a gate insulating film covering the semiconductor layer; and
a gate electrode formed on the gate insulating film and having at least one opening to expose a channel region between the source region and the drain region,
wherein the gate electrode defines the opening formed therethrough and is formed in a closed loop shape to surround the opening in a plan view,
wherein the source region includes a first concentration of impurities of a first impurity type,
wherein the semiconductor layer comprises a lightly doped region including a second concentration of impurities of the first impurity type,
wherein the second concentration is lower than the first concentration,
wherein the lightly doped region includes a first portion formed adjacent to the source region and a second portion formed adjacent to the drain region, and
wherein the gate electrode partially covers at least one of the first portion and the second portion in a plan view.
2. The TFT of claim 1 , wherein the semiconductor layer includes polysilicon.
3. The TFT of claim 1 , wherein the opening is formed to penetrate through the gate electrode such that the gate electrode has a plurality of inner walls defining the opening, and the plurality of inner walls have a closed loop shape in a plan view.
4. A TFT substrate comprising:
a plurality of data lines and gate lines crossing each other and defining pixel regions;
a plurality of first TFTs, wherein each of the pixel regions includes a first TFT; and
a second TFT positioned in a region other than the pixel regions, the second TFT including a source region and a drain region,
wherein the second TFT has a gate electrode having at least one opening,
wherein the at least one opening is positioned to expose one or more regions between the source region of the second TFT and the drain region of the second TFT, and
wherein the gate electrode defines the opening formed therethrough and is formed in a closed loop shape to surround the opening in a plan view,
wherein the source region includes a first concentration of impurities of a first impurity type,
wherein the semiconductor layer comprises a lightly doped region including a second concentration of impurities of the first impurity type,
wherein the second concentration is lower than the first concentration,
wherein the lightly doped region includes a first portion formed adjacent to the source region and a second portion formed adjacent to the drain region, and
wherein the gate electrode partially covers at least one of the first portion and the second portion in a plan view.
5. The TFT substrate of claim 4 , wherein the second TFT is positioned in an edge region of the TFT substrate.
6. The TFT substrate of claim 4 , wherein each of the first TFTs comprises a semiconductor layer including a source region and a drain region, and wherein the semiconductor layer comprises polysilicon.
7. The TFT substrate of claim 4 , wherein the opening is formed to penetrate through the gate electrode such that the gate electrode has a plurality of inner walls defining the opening, and the plurality of inner walls have a closed loop shape in a plan view.