Wire structure, method for fabricating wire, thin film transistor substrate, and method for fabricating thin film transistor substrate

1. A wire structure comprising:

a barrier layer including copper nitride formed on a substrate;

a conductive layer formed on the barrier layer, the conductive layer including copper or a copper alloy; and

a capping layer formed on the conductive layer and including molybdenum or a molybdenum alloy,

wherein the lateral profiles of the barrier layer, the conductive layer, and the capping layer have substantially the same taper angle, and

wherein the barrier layer contacts with the substrate.

2. The wire structure of claim 1 , wherein the thickness of the barrier layer is in a range of 50- 1000 Å.

3. The wire structure of claim 1 , wherein the barrier layer includes nitrogen in an amount of 0.001-50 atomic percent.

4. The wire structure of claim 1 , wherein the substrate is selected from materials consisting of a semiconductor layer, an insulating layer, or glass.

5. A thin film transistor (TFT) substrate comprising:

gate wires including a gate line extending in a first direction and a gate electrode connected to the gate line on an insulating substrate;

data wires insulated from the gate wires and including a data line extending in a second direction and intersecting the gate line, a source electrode connected to the data line, and a drain electrode spaced apart from the source electrode on the insulating substrate; and

a pixel electrode connected to the drain electrode which is formed on the gate wire on the gate wires and the data wires,

wherein the gate wires and/or the data wires include a barrier layer formed on a substrate and including copper nitride, a conductive layer formed on the barrier layer and including copper or a copper alloy, a capping layer formed on the conductive layer and including molybdenum or a molybdenum alloy, and

wherein the lateral profiles of the barrier layer, the conductive layer, and the capping layer have substantially the same taper angle, and

wherein the barrier layer contacts with the substrate.

6. The thin film transistor substrate of claim 5 , wherein the thickness of the barrier layer is in a range of 50-1000 Å.

7. The thin film transistor substrate of claim 6 , wherein the barrier layer includes nitrogen in an amount of 0.001-50 atomic percent.