IP Library Patent Application 11487275
Patent Application
App. No. 11/487,275

Stable organic devices

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Quick Facts
Patent No.
US None
App. No.
11/487,275
Abstract

Stable organic devices, as well as related components, systems, and methods, are disclosed.

Claims (33)

1 . An article, comprising:

first and second electrodes;

a photoactive layer between the first and second electrodes, the photoactive layer comprising an electron acceptor material and an electron donor material; and

a material disposed between the photoactive layer and at least one of the first and second electrodes, the material being different from the at least one of the first and second electrodes and comprising a semiconductive metal oxide or a metal capable of forming a semiconductive metal oxide, wherein the article is a photovoltaic cell.

2 . The article of claim 1 , wherein the material comprises a semiconductive metal oxide.

3 . The article of claim 2 , wherein the semiconductive metal oxide comprises titanium oxides, zinc oxides, tin oxides, tungsten oxides, copper oxides, chromium oxides, silver oxides, nickel oxides, gold oxides, or combinations thereof.

4 . The article of claim 1 , wherein the material comprises a metal capable of forming a semiconductive metal oxide.

5 . The article of claim 4 , wherein the metal comprises titanium, gold, silver, copper, chromium, tin, nickel, zinc, or tungsten, or combinations thereof.

6 . The article of claim 1 , wherein the material has a surface resistivity of at most about 1,000 Ohm/sq.

7 . The article of claim 1 , wherein the material has a surface resistivity of at most about 10 Ohm/sq.

8 . The article of claim 1 , wherein the material has a surface resistivity of at most about 0.1 Ohm/sq.

9 . The article of claim 1 , wherein the material forms a layer having a thickness of at least about 0.1 nm.

10 . The article of claim 1 , wherein the material forms a layer having a thickness of at most about 50 nm.

11 . The article of claim 1 , wherein the electron acceptor material comprises a material selected from the group consisting of fullerenes, inorganic nanoparticles, oxadiazoles, discotic liquid crystals, carbon nanorods, inorganic nanorods, polymers containing CN groups, polymers containing CF 3 groups, and combinations thereof.

12 . The article of claim 1 , wherein the electron acceptor material comprises substituted fullerenes.

13 . The article of claim 1 , wherein the electron donor material comprises a material selected from the group consisting of discotic liquid crystals, polythiophenes, polyphenylenes, polyphenylvinylenes, polysilanes, polythienylvinylenes, and polyisothianaphthalenes.

14 . The article of claim 1 , wherein the electron donor material comprises poly( 3 -hexylthiophene).

15 . The article of claim 1 , wherein at least one of the first and second electrodes comprises a mesh electrode.

16 . The article of claim 1 , wherein at least one of the first and second electrodes comprises a metal.

17 . A device, comprising:

first and second electrodes;

an organic semiconductive layer between the first and second electrodes; and

a material disposed between the semiconductive layer and at least one of the first and second electrodes, the material being different from the at least one of the first and second electrodes and comprising a semiconductive metal oxide or a metal capable of forming a semiconductive metal oxide.

18 . The device of claim 17 , wherein the material comprises a semiconductive metal oxide.

19 . The device of claim 18 , wherein the semiconductive metal oxide comprises titanium oxides, zinc oxides, tin oxides, tungsten oxides, copper oxides, chromium oxides, silver oxides, nickel oxides, gold oxides, or combinations thereof.

20 . The device of claim 17 , wherein the material comprises a metal capable of forming a semiconductive metal oxide.

21 . The device of claim 20 , wherein the metal comprises titanium, gold, silver, copper, chromium, tin, nickel, zinc, or tungsten, or combinations thereof.

22 . The device of claim 17 , wherein the device is an organic photovoltaic cell, an organic photodetector, an organic light-emitting diode, or an organic field-effect transistor.

23 . A method, comprising:

forming the article of claim 1 by a continuous process.

24 . The method of claim 23 , wherein the continuous process is a roll-to-roll process.

25 . A method, comprising: forming the device of claim 17 by a continuous process.

26 . The method of claim 25 , wherein the continuous process is a roll-to-roll process.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 29, 2013
From: KONARKA TECHNOLOGIES, INC.
To: MERCK KGAA
Reel/Frame 029717/0048 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 29, 2013
From: MERCK KGAA
To: MERCK PATENT GMBH
Reel/Frame 029717/0065 →
SECURITY AGREEMENT Recorded Oct 26, 2011
From: KONARKA TECHNOLOGIES, INC.
To: TOTAL GAS & POWER USA (SAS)
Reel/Frame 027465/0192 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 7, 2007
From: BRABEC, CHRISTOPH; COAKLEY, KEVIN; DENK, PATRICK; KOPPE, MARKUS; LEE, KWANGHEE; SCHARBER, MARKUS; WALDAUF, CHRISTOPH
To: KONARKA TECHNOLOGIES, INC.
Reel/Frame 019258/0848 →