Thin film transistor array panel and a method for manufacturing the same

1. A thin film transistor array panel comprising:

a substrate;

a plurality of gate lines that are formed on the substrate;

a plurality of data lines that intersect the gate lines;

a plurality of thin film transistors that are connected to the gate lines and the data lines;

a plurality of color filters that are formed on upper parts of the gate lines, the data lines, and the thin film transistors;

a common electrode that is formed on the color filters and that includes a transparent conductor;

a passivation layer that is formed on an upper part of the common electrode; and

a plurality of pixel electrodes that are formed on an upper part of the passivation layer and that are connected to a drain electrode of each of the thin film transistors.

2. The thin film transistor array panel of claim 1 , wherein each of the pixel electrodes comprises a plurality of branch electrodes that are inclined at an angle to at least one of the gate lines or at least one of the data lines, and a connection part for connecting the plurality of branch electrodes.

3. The thin film transistor array panel of claim 2 , wherein each of the branch electrodes is arranged symmetrically around a center line of the pixel electrode that is parallel to one of the gate lines.

4. The thin film transistor array panel of claim 1 , wherein the color filter has an opening and the passivation layer has a contact hole that exposes the drain electrode through the opening.

5. The thin film transistor array panel of claim 4 , wherein the common electrode has an opening that is larger than the contact hole and that exposes a part of the color filter on an upper part of the drain electrode.

6. The thin film transistor array panel of claim 5 , wherein the passivation layer completely covers the opening of the common electrode.

7. The thin film transistor array panel of claim 1 , further comprising a common signal line that is formed in a same layer as the gate lines and that is electrically connected to the common electrode.

8. The thin film transistor array panel of claim 7 , wherein the passivation layer has a first contact hole and the common electrode has a second contact hole that exposes the common signal line through the first contact hole,

wherein a contact member for connecting the common signal line and the common electrode through the first and second contact holes is formed in a same layer as the pixel electrodes.

9. A method of manufacturing a thin film transistor array panel, comprising:

forming a gate line on an insulation substrate;

forming a gate insulating layer covering the gate line;

forming a semiconductor on an upper part of the gate insulating layer;

forming a data line and a drain electrode on the upper part of the gate insulating layer, the data line having a source electrode;

forming a color filter on upper parts of the data line and the drain electrode;

forming a common electrode on an upper part of the color filter;

forming a passivation layer covering the common electrode; and

forming a pixel electrode on an upper part of the passivation layer.

10. The method of claim 9 , wherein the passivation layer is made of benzocyclobutene (BCB) or acryl.

11. The method of claim 9 , wherein when the forming the gate line, a common signal line is formed.

12. The method of claim 9 , wherein the passivation layer has a first contact hole and the common electrode has a second contact hole that exposes the common signal line through the first contact hole,

the method further comprising:

forming a contact member for connecting the common signal line and the common electrode through the first and second contact holes in a same layer as the pixel electrode.

13. The method of claim 9 , wherein the common electrode is made of poly-crystalline or amorphous indium tin oxide (ITO) or indium zinc oxide (IZO).

14. A thin film transistor array panel comprising:

a substrate;

a plurality of gate lines formed on the substrate;

a plurality of data lines intersecting the gate lines;

a plurality of thin film transistors connected to the gate lines and the data lines;

a plurality of color filters formed above of the gate lines, the data lines, and the thin film transistors;

a common electrode formed on the color filters;

a first passivation layer formed on an upper part of the common electrode;

a second passivation layer formed on an upper part of a drain electrode of each of the thin film transistors; and

a plurality of pixel electrodes formed on an upper part of the first passivation layer and that are electrically connected to the drain electrode through an opening.

15. The thin film transistor array panel of claim 14 , wherein the common electrode includes an opening exposing a part of the color filter, and a part of the first passivation layer overlaps the opening exposing the part of the color filter to form a side of the opening through which the pixel electrodes are electrically connected to the drain electrode.

16. The thin film transistor array panel of claim 14 , wherein each of the pixel electrodes includes a plurality of branch electrodes disposed in first and second directions.

17. The thin film transistor array panel of claim 14 , wherein the first passivation layer has a first contact hole, the common electrode has a second contact hole, and the second passivation layer has a third contact hole that exposes the common signal line through the first and second contact holes,

wherein a contact member for connecting the common signal line and the common electrode through the first, second and third contact holes is formed in a same layer as the pixel electrodes.