Ultrasonic transducer and manufacturing method thereof
View Patent ↗Disclosed is an improved construction of an ultrasonic transducer, wherein a charge is not easily injected into an insulating film even when the bottom of a membrane comes in contact with a lower electrode, and a manufacturing method thereof without using the wafer laminating technique. The ultrasonic transducer includes a lower electrode; a cavity layer formed on the first electrode; an insulating film covering the cavity layer; and an upper electrode formed on the insulating film, wherein, the cavity layer includes projections formed into an insulating film protruded from the cavity layer. In addition, an opening is formed into the upper electrode, and this upper electrode having the opening formed therein is deposited at a position not being superposed with the projections of the insulating film when seen from the top.
1. An ultrasonic transducer, comprising:
a first electrode;
a cavity formed over the first electrode;
an insulating film formed over the first electrode; and
a second electrode formed over the cavity;
wherein the insulating film includes a projection extending in the cavity so that a portion of the cavity is disposed between the projection of the insulating film and the first electrode; and
wherein, at least a portion of at least one of the first electrode and the second electrode has an opening corresponding with the projection of the insulating film, when viewed in plan view.
2. An ultrasonic transducer comprising:
a first electrode;
a cavity formed over the first electrode;
an insulating film formed over the cavity; and
a second electrode formed on the insulating film,
wherein the insulating film includes a projection extending in the cavity so that a portion of the cavity is disposed between the projection of the insulating film and the first electrode;
wherein at least a portion of at least one of the first electrode and the second electrode has an opening corresponding with the projection of the insulating film, when viewed in plan view.
3. The ultrasonic transducer of claim 2 , wherein the insulating film has the projection extending therefrom into the cavity.
4. The ultrasonic transducer of claim 3 , wherein the insulating film and the insulating film with the projections are silicon oxide films.
5. The ultrasonic transducer of claim 3 , wherein a distance between an outer peripheral surface of the projection and an inner peripheral surface of an opening formed in one electrode is greater than a thickness of the insulating film.
6. A manufacturing method of an ultrasonic transducer, comprising:
forming a first electrode;
forming a sacrifice layer over the first electrode, the sacrifice layer having a bottom surface;
forming a recess in the sacrifice layer, the recess having a bottom surface, which is spaced from the bottom surface of the sacrifice layer;
forming a first insulating film which covers the sacrifice layer and forms a projection which extends into and fills the recess in the sacrifice layer;
forming a second electrode on the first insulating film;
forming a second insulating film which covers the second electrode and the first insulating film;
forming a hole in the first insulating film and the second insulating film which penetrates the first insulating film and the second insulating film so as to extend to the sacrifice layer; and
removing the sacrifice layer through the hole, so as to form a cavity.
7. The method of claim 6 , comprising:
forming an opening in a portion of the second electrode,
wherein the opening corresponding with the projection of the first insulating film when viewed in plan view.
8. The method of claim 7 , wherein a distance between an outer peripheral surface of the projection and an inner peripheral surface of the opening formed into the second electrode is greater than a thickness of the first insulating film.
9. The method of claim 6 , comprising:
forming an opening into a portion of the first electrode, wherein the opening corresponding with the projection of the first insulating film when viewed in the plan view.
10. The method of claim 9 , wherein a distance between an outer peripheral surface of the projection and an inner peripheral surface of the opening formed into the first electrode is greater than a thickness of the first insulating film.