High power AllnGaN based multi-chip light emitting diode

1 - 57 . (canceled)

58 . A light emitting diode chip formed by a process comprising:

providing a substrate;

forming an active region so as to substantially cover a surface of the substrate; and

forming the active region such that the active region has an aspect ratio greater than approximately 1.5 to 1.

59 . The light emitting diode chip as recited in claim 58 , wherein the substrate comprises a transparent substrate.

60 . The light emitting diode chip as recited in claim 58 , wherein the aspect ratio of the active region is greater than approximately 2 to 1.

61 . The light emitting diode chip as recited in claim 58 , wherein one light emitting diode is formed upon the substrate.

62 . The light emitting diode chip as recited in claim 58 , wherein the substrate comprises a material selected from the group consisting of:

sapphire;

spinel;

glass;

ZnO;

SiC;

MgO;

GaN;

AlN; and

AlGaN.

63 . The light emitting diode chip as recited in claim 58 , wherein the active region comprises AlInGaN.

64 . A light emitting diode chip formed by a process comprising:

providing a substrate;

forming an active region so as to not completely cover a surface of the substrate; and

forming the active region such that the active region has an aspect ratio greater than approximately 1.5 to 1.

65 . The light emitting diode chip as recited in claim 64 , wherein the substrate comprises a transparent substrate.

66 . The light emitting diode chip as recited in claim 64 , wherein the aspect ratio of the active region is greater than approximately 2 to 1.

67 . The light emitting diode chip as recited in claim 64 , wherein one light emitting diode is formed upon the substrate.

68 . The light emitting diode chip as recited in claim 64 wherein the substrate comprises a material selected from the group consisting of:

sapphire;

spinel;

glass;

ZnO;

SiC;

MgO;

GaN;

AlN; and

AlGaN.

69 . The light emitting diode chip as recited in claim 64 wherein the active region comprises AlInGaN.

70 . A light emitting diode lamp formed by a process comprising:

providing a substrate;

forming an active region so as to substantially cover a surface of the substrate;

forming the active region such that the active region has an aspect ratio greater than approximately 1.5 to 1; and

placing the active region in a package.

71 . The light emitting diode lamp as recited in claim 70 , wherein the substrate comprises a transparent substrate.

72 . The light emitting diode lamp as recited in claim 70 , wherein the aspect ratio of the active region is greater than approximately 2 to 1.

73 . The light emitting diode lamp as recited in claim 70 , wherein one light emitting diode is formed upon the substrate.

74 . The light emitting diode lamp as recited in claim 70 , wherein the substrate comprises a material selected from the group consisting of:

sapphire;

spinel;

glass;

ZnO;

SiC;

MgO;

GaN;

AlN; and

AlGaN.

75 . The light emitting diode lamp as recited in claim 70 , wherein the active region comprises AlInGaN.

76 . A light emitting diode lamp formed by a process comprising:

providing a substrate;

forming an active region so as to not completely cover a surface of the substrate;

forming the active region such that the active region has an aspect ratio greater than approximately 1.5 to 1; and

placing the active region in a package.

77 . The light emitting diode lamp as recited in claim 76 , wherein the substrate comprises a transparent substrate.

78 . The light emitting diode lamp as recited in claim 76 , wherein the aspect ratio of the active region is greater than approximately 2 to 1.

79 . The light emitting diode lamp as recited in claim 76 , wherein one light emitting diode is formed upon the substrate.

80 . The light emitting diode lamp as recited in claim 76 , wherein the substrate comprises a material selected from the group consisting of:

sapphire;

spinel;

glass;

ZnO;

SiC;

MgO;

GaN;

AlN; and

AlGaN.

81 . The light emitting diode lamp as recited in claim 76 , wherein the active region comprises AlInGaN.

82 . An illumination device formed by a process comprising:

providing a substrate;

forming an active region so as to substantially cover a surface of the substrate;

forming the active region such that the active region has an aspect ratio greater than approximately 1.5 to 1;

wherein the active region at least partially defines a light emitting diode; and

facilitating electrical communication between a power source and the light emitting diode.

83 . The illumination device as recited in claim 82 , wherein the substrate comprises a transparent substrate.

84 . The illumination device as recited in claim 82 , wherein the aspect ratio of the active region is greater than approximately 2 to 1.

85 . The illumination device as recited in claim 82 , wherein one light emitting diode is formed upon the substrate.

86 . The illumination device as recited in claim 82 , wherein the substrate comprises a material selected from the group consisting of:

sapphire;

spinel;

glass;

ZnO;

SiC;

MgO;

GaN;

AlN; and

AlGaN.

87 . The illumination device as recited in claim 82 , wherein the active region comprises AlInGaN.

88 . An illumination device formed by a process comprising:

providing a substrate;

forming an active region so as to not completely cover a surface of the substrate;

forming the active region such that the active region has an aspect ratio greater than approximately 1.5 to 1;

wherein the active region at least partially defines a light emitting diode; and

facilitating electrical communication between a power source and the light emitting diode.

89 . The illumination device as recited in claim 88 , wherein the substrate comprises a transparent substrate.

90 . The illumination device as recited in claim 88 , wherein the aspect ratio of the active region is greater than approximately 2 to 1.

91 . The illumination device as recited in claim 88 , wherein one light emitting diode is formed upon the substrate.

92 . The illumination device as recited in claim 88 , wherein the substrate comprises a material selected from the group consisting of:

sapphire;

spinel;

glass;

ZnO;

SiC;

MgO;

GaN;

AlN; and

AlGaN.

93 . The illumination device as recited in claim 88 , wherein the active region comprises AlInGaN.

94 . A light emitting diode chip comprising:

a substrate;

an active region formed so as to substantially cover a surface of the substrate; and

wherein the active region has an aspect ratio greater than approximately 1.5 to 1.

95 . The light emitting diode chip as recited in claim 94 , wherein the substrate comprises a transparent substrate.

96 . The light emitting diode chip as recited in claim 94 , wherein the aspect ratio of the active region is greater than approximately 2 to 1.

97 . The light emitting diode chip as recited in claim 94 , wherein one light emitting diode is formed upon the substrate.

98 . The light emitting diode chip as recited in claim 94 , wherein the substrate comprises a material selected from the group consisting of:

sapphire;

spinel;

glass;

ZnO;

SiC;

MgO;

GaN;

AlN; and

AlGaN.

99 . The light emitting diode chip as recited in claim 94 , wherein the active region comprises AlInGaN.

100 . A light emitting diode chip comprising:

a substrate;

an active region formed so as to not completely cover a surface of the substrate; and

wherein the active region has an aspect ratio greater than approximately 1.5 to 1.

101 . The light emitting diode chip as recited in claim 100 , wherein the substrate comprises a transparent substrate.

102 . The light emitting diode chip as recited in claim 100 , wherein the aspect ratio of the active region is greater than approximately 2 to 1.

103 . The light emitting diode chip as recited in claim 100 , wherein one light emitting diode is formed upon the substrate.

104 . The light emitting diode chip as recited in claim 100 , wherein the substrate comprises a material selected from the group consisting of:

sapphire;

spinel;

glass;

ZnO;

SiC;

MgO;

GaN;

AlN; and

AlGaN.

105 . The light emitting diode chip as recited in claim 100 , wherein the active region comprises AlInGaN.

106 . A light emitting diode lamp comprising:

a substrate;

an active region formed so as to substantially cover a surface of the substrate;

wherein the active region has an aspect ratio greater than approximately 1.5 to 1; and

a package within which the active region is disposed.

107 . The light emitting diode lamp as recited in claim 106 , wherein the substrate comprises a transparent substrate.

108 . The light emitting diode lamp as recited in claim 106 , wherein the aspect ratio of the active region is greater than approximately 2 to 1.

109 . The light emitting diode lamp as recited in claim 106 , wherein one light emitting diode is formed upon the substrate.

110 . The light emitting diode lamp as recited in claim 106 , wherein the substrate comprises a material selected from the group consisting of:

sapphire;

spinel;

glass;

ZnO;

SiC;

MgO;

GaN;

AlN; and

AlGaN.

111 . The light emitting diode lamp as recited in claim 106 , wherein the active region comprises AlInGaN.

112 . A light emitting diode lamp comprising:

a substrate;

an active region formed so as to not completely cover a surface of the substrate;

wherein the active region has an aspect ratio greater than approximately 1.5 to 1; and

a package within which the active region is disposed.

113 . The light emitting diode lamp as recited in claim 112 , wherein the substrate comprises a transparent substrate.

114 . The light emitting diode lamp as recited in claim 112 , wherein the aspect ratio of the active region is greater than approximately 2 to 1.

115 . The light emitting diode lamp as recited in claim 112 , wherein one light emitting diode is formed upon the substrate.

116 . The light emitting diode lamp as recited in claim 112 , wherein the substrate comprises a material selected from the group consisting of:

sapphire;

spinel;

glass;

ZnO;

SiC;

MgO;

GaN;

AlN; and

AlGaN.

117 . The light emitting diode lamp as recited in claim 112 , wherein the active region comprises AlInGaN.

118 . An illumination device comprising:

a substrate;

an active region formed so as to substantially cover a surface of the substrate;

wherein the active region has an aspect ratio greater than approximately 1.5 to 1;

wherein the active region at least partially defines a light emitting diode; and

a power source in electrical communication with the light emitting diode.

119 . The illumination device as recited in claim 118 , wherein the substrate comprises a transparent substrate.

120 . The illumination device as recited in claim 118 , wherein the aspect ratio of the active region is greater than approximately 2 to 1.

121 . The illumination device as recited in claim 118 , wherein one light emitting diode is formed upon the substrate.

122 . The illumination device as recited in claim 118 , wherein the substrate comprises a material selected from the group consisting of:

sapphire;

spinel;

glass;

ZnO;

SiC;

MgO;

GaN;

AlN; and

AlGaN.

123 . The illumination device as recited in claim 118 , wherein the active region comprises AlInGaN.

124 . An illumination device comprising:

a substrate;

an active region formed so as to not completely cover a surface of the substrate;

wherein the active region has an aspect ratio greater than approximately 1.5 to 1;

wherein the active region at least partially defines a light emitting diode; and

a power source in electrical communication with the light emitting diode.

125 . The illumination device as recited in claim 124 , wherein the substrate comprises a transparent substrate.

126 . The illumination device as recited in claim 124 , wherein the aspect ratio of the active region is greater than approximately 2 to 1.

127 . The illumination device as recited in claim 124 , wherein one light emitting diode is formed upon the substrate.

128 . The illumination device as recited in claim 124 , wherein the substrate comprises a material selected from the group consisting of:

sapphire;

spinel;

glass;

ZnO;

SiC;

MgO;

GaN;

AlN; and

AlGaN.

129 . The illumination device as recited in claim 124 , wherein the active region comprises AlInGaN.