Polycrystalline silicon film containing Ni

1. A method for forming a polycrystalline silicon layer, comprising:

preparing a substrate having an amorphous silicon layer;

adding a plurality of metal atoms to the amorphous silicon layer; and

applying a heat and an electric field to the amorphous silicon layer so as to crystallize the amorphous silicon layer into a polycrystalline silicon layer using a MIC (Metal Induced Crystallization) method, the polycrystalline silicon layer including a plurality of needle-shaped silicon crystallites,

wherein the polycrystalline silicon layer has the metal atoms in the range of 2×10 17 to 5×10 19 atoms/cm 3 and an electrical conductivity activation energy between 0.52 eV and 0.71 eV.

2. The method according to claim 1 , wherein a buffer layer is formed between the substrate and the polycrystalline silicon layer.

3. The method according to claim 1 , wherein the metal atoms includes one of nickel (Ni), gold (Au) and cobalt (Co).

4. The method according to claim 1 , wherein the metal atoms works as a catalyst for the MIC.

5. The method according to claim 3 , wherein a temperature range of the heat is between 400 and 500° C.

6. The method according to claim 1 , wherein the needle-shaped silicon crystallites are formed by movement of nickel silicide (NiSi 2 ).