Display device and method of manufacturing the same
A display device and a method of manufacturing the same are provided. The display device comprises a substrate, a light-emitting element and a switch element. The substrate has a substrate upper surface and a recess region lower than the substrate upper surface. The light-emitting element comprises a first electrode, a light-emitting layer and a second electrode. The first electrode is disposed on the recess region. The light-emitting layer is disposed on the first electrode. The second electrode is disposed on the light-emitting layer. The switch element is disposed on the substrate upper surface and electrically connected to the light-emitting element.
1 . A display device, comprising:
a substrate having a substrate upper surface and a recess region lower than the substrate upper surface;
a light-emitting element, which comprises:
a first electrode disposed on the recess region;
a light-emitting layer disposed on the first electrode; and
a second electrode disposed on the light-emitting layer; and
a switch element, which is disposed on the substrate upper surface and electrically connected to the light-emitting element.
2 . The display device according to claim 1 , wherein the recess region has a recess region bottom surface and an inclined surface, which inclines from the substrate upper surface to the recess region bottom surface.
3 . The display device according to claim 2 , wherein the inclined surface has a top end and a bottom end, and a horizontal distance between the top end and the bottom end is greater than a vertical distance between the top end and the bottom end.
4 . The display device according to claim 2 , wherein a cross-sectional profile of the inclined surface is non-linear.
5 . The display device according to claim 4 , wherein the cross-sectional profile of the inclined surface is a curve.
6 . The display device according to claim 1 , wherein the switch element is a thin film transistor (TFT).
7 . The display device according to claim 1 , wherein the light-emitting element is an organic light emitting diode (OLED).
8 . The display device according to claim 1 , wherein the recess region is lower than the substrate upper surface by 0.01 μm to 10 μm.
9 . A display device, comprising:
a substrate having a substrate upper surface; and
a plurality of sub-pixel, which each sub-pixel comprises:
a light-emitting element, which comprises:
a first electrode having a first electrode bottom surface;
a light-emitting layer disposed on the first electrode; and
a second electrode disposed on the light-emitting layer; and
a switch element, which is disposed on the substrate upper surface and electrically connected to the light-emitting element,
wherein a part of the first electrode bottom surface contacts the substrate and is lower than the substrate upper surface.
10 . The display device according to claim 9 , wherein the switch element is a thin film transistor (TFT).
11 . The display device according to claim 9 , wherein the light-emitting element is an organic light emitting diode (OLED).
12 . The display device according to claim 9 , wherein the first electrode bottom surface is lower than the substrate upper surface by 0.01 μm to 10 μm.
13 . The display device according to claim 9 , wherein the part of the first electrode bottom surface of the first electrode is disposed in a light-emitting region of the sub-pixel.
14 . A method of manufacturing a display device, the method comprising the steps of:
providing a substrate having a substrate upper surface;
forming a switch element on the substrate;
forming a recess region on the substrate, wherein the recess region is lower than the substrate upper surface; and
forming a light-emitting element on the recess region, wherein the light-emitting element is electrically connected to the switch element.
15 . The method according to claim 14 , wherein the step of forming the light-emitting element comprises:
forming a first electrode on the recess region;
forming a light-emitting layer on the first electrode; and
forming a second electrode on the light-emitting layer.
16 . The method according to claim 14 , wherein the step of forming the switch element comprises:
forming a gate electrode;
forming a source/drain; and
forming a contact hole, which exposes a part of the source/drain, wherein the recess region and the contact hole are formed simultaneously.
17 . The method according to claim 14 , wherein the recess region is formed by way of wet etching.
18 . The method according to claim 14 , wherein the recess region is formed by way of dry plus wet etching.
19 . The method according to claim 14 , wherein the recess region is formed by removing a 0.01-to-10 μm thickness of the substrate downward from the substrate upper surface.
20 . The method according to claim 14 , wherein the switch element is formed by a low temperature poly silicon (LTPS) process.
21 . The method according to claim 14 , wherein the switch element is formed by an amorphous silicon process.