Chemical amplification-type resist composition and production process thereof

1. A production process of a chemical amplification-type resist composition, which is a process for producing a chemical amplification-type composition comprising: (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (B) a resin of which solubility in an alkali developer is changed under an action of an acid; (C) a basic compound; (D) a surfactant; and (E) a solvent, the production process comprising:

preparing a solution containing the component (A);

preparing a solution containing the component (B);

filtering the solution containing the component (B) through a first filter; and

mixing the solution containing the component (A) with the solution containing the component (B) and with the components (C) to (E).

2. A production process of a chemical amplification-type resist composition, which is a process for producing a chemical amplification-type composition comprising: (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (B) a resin of which solubility in an alkali developer is changed under an action of an acid; (C) a basic compound; (D) a surfactant; and (E) a solvent, the production process comprising:

preparing four solutions containing the components (A) to (D), respectively; and

mixing the components (A) to (E) with each other as solutions.

3. The production process of a chemical amplification-type resist composition according to claim 1 ,

wherein the first filter has an average pore size of 2.0 m or less.

4. The production process of a chemical amplification-type resist composition according to claim 1 , which further comprises:

filtering the solution containing the component (A) through a second filter before mixing the solution containing component (A) with the solution containing component (B) and with the components (C) to (E).

5. The production process of a chemical amplification-type resist composition according to claim 4 ,

wherein the second filter has an average pore size of 0.4 μm or less.

6. The production process of a chemical amplification-type resist composition according to claim 2 , which further comprises:

filtering the two solutions containing the components (C) and (D), respectively through a first filter.

7. The production process of a chemical amplification-type resist composition according to claim 6 ,

wherein the first filter has an average pore size of 0.4 μm or less.

8. The production process of a chemical amplification-type resist composition according to claim 1 , which further comprises:

filtering the mixed solution containing the components (A) to (E) through a second filter having an average pore size of 0.05 μm or less.

9. The production process of a chemical amplification-type resist composition according to claim 2 , which further comprises:

filtering the solution containing the component (B) through a first filter before mixing the components (A) to (E).

10. The production process of a chemical amplification-type resist composition according to claim 9 , which further comprises:

filtering the solution containing the component (A) through a second filter before mixing the components (A) to (E).

11. The production process of a chemical amplification-type resist composition according to claim 10 , which further comprises:

filtering the two solutions containing the components (C) and (D), respectively through the second fitter before mixing the components (A) to (E).

12. The production process of a chemical amplification-type resist composition according to claim 11 , which further comprises:

filtering the mixed solution containing the components (A) to (E) through a third filter having an average pore size of 0.0.5 μm or less.

13. The production process of a chemical amplification-type resist composition according to claim 2 , which further comprises:

filtering the solution containing the component (A) through a first filter before mixing the components (A) to (E).

14. The production process of a chemical amplification-type resist composition according to claim 9 ,

wherein the first filter has an average pore size of 2.0 μm or less.

15. The production process of a chemical amplification-type resist composition according to claim 11 ,

wherein the second filter has an average pore size of 0.4 μm or less.

16. The production process of a chemical amplification-type resist composition according to claim 12 ,

wherein the first filter has an average pore size of 2.0 m or less and the second filter has an average pore size of 0.4 μm or less.