Thin film transistor substrate and method of making the same

1. A thin film transistor substrate comprising:

an insulating substrate;

a source electrode and a drain electrode which are formed on the insulating substrate and separated from each other and have a channel area therebetween;

a wall exposing at least portions of the source electrode and the drain electrode, respectively, encompassing the channel area, and formed of fluoropolymer;

an organic semiconductor layer formed inside the wall, and

an organic insulating layer disposed on the organic semiconductor layer and formed inside the wall,

wherein the wall encompasses the organic semiconductor layer and the organic insulating layer.

2. The thin film transistor substrate of claim 1 , wherein the wall is made of one selected from the group comprised of poly tetra fluoro ethylene (PTFE), fluorinated ethylene propylene (FEP), poly fluoro alkoxy (PFA), ethylene tetra fluoro ethylene (ETFE), polyvinylidene fluoride (PVDF), and cyclized transparent polymer generated by copolymerization of perfluoro (alkenylfinyl ethers).

3. The thin film transistor substrate of claim 1 , wherein the wall is photoresist substance.

4. The thin film transistor substrate of claim 1 , wherein the organic semiconductor layer is one of a derivative including substituent of tetracene or pentacene; 4˜8 oligothiopene connected to 2, 5 position of thiopene ring;

perylenetetracarboxilic dianhidride or an imide derivative thereof;

naphthalenetetracarboxilic dianhydride or an imide derivative thereof; metallized pthalocyanine or a halogenated derivatives thereof, or perylene, coroene or derivatives including substituents thereof; co-oligomer or co-polymer of thienylene and vinylene;

thiopene; perylene or coroene, or derivatives including substituents thereof; and derivatives including one or more hydrocarbon chains of 1˜30 carbons to aromatic or heteroaromatic ring of the aforementioned materials.

5. The thin film transistor substrate of claim 1 , wherein the organic semiconductor layer is formed by an ink-jet method.

6. The thin film transistor substrate of claim 1 , wherein the source electrode and the drain electrode are made of indium tin oxide (ITO) or indium zinc oxide (IZO).

7. The thin film transistor substrate of claim 1 , further comprising a light shield layer disposed between the insulating substrate and the source electrode and between the insulating substrate and the drain electrode, and corresponding to the channel area; and an insulating layer disposed on the light shield layer.

8. The thin film transistor substrate of claim 1 , further comprising a gate electrode disposed on the organic insulating layer.

9. The thin film transistor substrate of claim 8 , wherein the organic insulating layer is not higher than the wall.

10. The thin film transistor substrate of claim 8 , further comprising a passivation layer disposed on the gate electrode, wherein the passivation layer is not higher than the wall.

11. A method of making a thin film transistor substrate comprising:

forming a source electrode and a drain electrode which are disposed on an insulating substrate and separated from each other and have a channel area therebetween;

forming a wall exposing at least portions of the source electrode and the drain electrode, respectively, encompassing the channel area, and formed of fluoropolymer;

forming an organic semiconductor layer inside the wall; and

forming an organic insulating layer on the organic semiconductor layer and inside Wall,

wherein the wall encompasses the organic semiconductor layer and the organic insulating layer.

12. The method of making the thin film transistor substrate of claim 11 , wherein the wall is made of one selected from the group comprised of poly tetra fluoro ethylene (PTFE), fluorinated ethylene propylene (FEP), poly fluoro alkoxy (PFA), ethylene tetra fluoro ethylene (ETFE), polyvinylidene fluoride (PVDF), and cyclized transparent polymer generated by copolymerization of perfluoro (alkenylfinyl ethers).

13. The method of making the thin film transistor substrate of claim 11 , wherein the wall is formed by depositing a fluoropolymer layer, then pattering the fluoropolymer using a photoresist layer.

14. The method of making the thin film transistor substrate of claim 11 , wherein the wall is formed by depositing a photoresist fluoropolymer layer, then exposing and developing the photoresist fluoropolymer layer.

15. The method of making the thin film transistor substrate of claim 11 , wherein the organic semiconductor layer is one of a derivative including substituent of tetracene or pentacene; 4˜8 oligothiopene connected to 2, 5 position of thiopene ring; perylenetetracarboxilic dianhidride or an imide derivative thereof;

naphthalenetetracarboxilic dianhydride or an imide derivative thereof; metallized pthalocyanine or a halogenated derivatives thereof; perylene, coroene; co oligomer or co-polymer of thienylene and vinylene;

thiopene; and derivatives including one or more hydrocarbon chains of 1˜30 carbons to aromatic or heteroaromatic ring of the aforementioned materials.

16. The method of making the thin film transistor substrate of claim 11 , wherein the organic semiconductor layer is formed by an ink-jet method.

17. The method of making the thin film transistor substrate of claim 11 , wherein the source electrode and the drain electrode are made of indium tin oxide (ITO) or indium zinc oxide (IZO).

18. The method of making the thin film transistor substrate of claim 11 , further comprising forming an organic insulating layer on the organic semiconductor layer with an ink jet method; and forming a gate electrode on the organic insulating layer.

19. The method of making the thin film transistor substrate of claim 18 , further comprising forming a passivation layer on the gate electrode with an ink-jet method.

20. A thin film transistor substrate comprising:

an insulating substrate;

a gate electrode disposed on the insulating substrate;

a wall encompassing the gate electrode and formed of fluoropolymer;

a gate insulating layer disposed on the gate electrode and formed inside the wall;

a source electrode and a drain electrode each disposed on the gate insulating layer and separated from each other, wherein portions of the source electrode and the drain electrode are formed on the wall; and

an organic semiconductor layer formed inside the wall.

21. The thin film transistor substrate of claim 1 further comprising a passivation layer disposed on the organic semiconductor layer.