Fabricating zinc oxide semiconductor using hydrolysis
View Patent ↗A process for fabricating at least one semiconductor layer of an electronic device including: performing on a composition including a hydrolyzable zinc compound a number of activities including: (a) hydrolyzing at least a portion of the hydrolyzable zinc compound to form zinc oxide; (b) liquid depositing; and (c) optionally heating, wherein the activities (a), (b), and (c) are each accomplished a number of times in any effective arrangement, resulting in the at least one semiconductor layer comprising the zinc oxide.
1. A process for fabricating at least one semiconductor layer of an electronic device comprising: performing on a composition including a hydrolyzable zinc compound a number of activities including:
(a) hydrolyzing at least a portion of the hydrolyzable zinc compound to form zinc oxide;
(b) liquid depositing; and
(c) optionally heating,
wherein the activities (a), (b), and (c) are each accomplished a number of times in any effective arrangement, resulting in the at least one semiconductor layer comprising the zinc oxide wherein the hydrolyzing accomplished a number of times converts a majority of the hydrolyzable zinc compound to the zinc oxide.
2. The process of claim 1 , wherein the composition consists essentially of water, an optional liquid, an optional other semiconductor material, and the hydrolyzable zinc compound.
3. The process of claim 1 , wherein the activity (a) accomplished a number of times converts more than about 80 mol % of the hydrolyzable zinc compound to the zinc oxide.
4. The process of claim 1 , wherein the hydrolyzable zinc compound is selected from diethylzinc, bi(cyclohexyl) zinc, zinc 2-methoxyethoxide, and a mixture thereof.
5. The process of claim 1 , wherein for the activity (b) the composition comprises a liquid selected from alcohol, ether, ester, aromatics, and a mixture thereof.
6. The process of claim 1 , wherein the activity (a) is performed during the activity (b).
7. The process of claim 1 , wherein the liquid depositing is selected from the group consisting of spin coating, inkjet printing, dip coating, stencil printing, microcontact printing, and a mixture thereof.
8. The process of claim 1 , wherein the heating is performed at a maximum temperature from about 100 degree C. to about 700 degree C.
9. The process of claim 1 , wherein the zinc oxide is predominantly crystalline.
10. The process of claim 1 , wherein the activities (a), (b), and (c) are each accomplished only once.
11. The process of claim 1 , wherein the activities (a), (b), and (c) are each accomplished more than once in any effective arrangement.
12. The process of claim 1 , wherein the hydrolysis is performed at a temperature from about room temperature to about 100 degree C. at about 10% to about 90% relative humidity level for about 1 min to about 1 week.
13. A process for fabricating at least one semiconductor layer of an electronic device comprising:
liquid depositing a composition comprising a hydrolyzable zinc compound and a liquid resulting in a liquid deposited composition;
hydrolyzing at least a portion of the hydrolyzable zinc compound in the liquid deposited composition to form zinc oxide, resulting in a hydrolyzed composition comprising the zinc oxide; and
optionally heating the hydrolyzed composition,
wherein the liquid depositing, the hydrolyzing, and the optional heating are each accomplished a number of times, resulting in the at least one semiconductor layer comprising the zinc oxide wherein the hydrolyzing accomplished a number of times converts a majority of the hydrolyzable zinc compound to the zinc oxide.
14. The process of claim 13 , wherein the hydrolyzable zinc compound is selected from the group consisting of diethylzinc, bi(cyclohexyl) zinc, zinc 2-methoxyethoxide, and a mixture thereof, and the liquid is a mixture of toluene and tetrahydrofuran.
15. The process of claim 13 , wherein the composition consists essentially of water, the liquid, an optional other semiconductor material, and the hydrolyzable zinc compound.
16. The process of claim 13 , wherein the hydrolyzing accomplished a number of times converts more than about 80 mol % of the hydrolyzable zinc compound to the zinc oxide.
17. A process comprising:
fabricating a thin film transistor comprising at least one semiconductor layer, a gate electrode; a source electrode; a drain electrode; and a gate dielectric,
wherein the at least one semiconductor layer is formed by a semiconductor fabrication process comprising: performing on a composition including a hydrolyzable zinc compound a number of activities including:
(a) hydrolyzing at least a portion of the hydrolyzable zinc compound to form zinc oxide;
(b) liquid depositing; and
(c) optionally heating,
wherein the activities (a), (b), and (c) are each accomplished a number of times in any effective arrangement, resulting in the at least one semiconductor layer comprising the zinc oxide wherein the hydrolyzing accomplished a number of times converts a majority of the hydrolyzable zinc compound to the zinc oxide.
18. The process of claim 17 , wherein the source electrode, the drain electrode, or both comprise a metal selected from the group consisting of aluminum, zinc, indium, silver, gallium, cadmium, tin, zinc-gallium oxide, indium-tin oxide, indium-antimony oxide, and the like.
19. The process of claim 17 , wherein the composition consists essentially of water, an optional liquid, an optional other semiconductor material, and the hydrolyzable zinc compound.
20. The process of claim 17 , wherein the hydrolyzing accomplished a number of times converts more than about 80 mol % of the hydrolyzable zinc compound to the zinc oxide.