Thin film magnetic memory device storing program information efficiently and stably
View Patent ↗Each of program cell and memory cells includes a magnetic storage portion of the same configuration. The program cell further includes a state change portion. That is, the program cell has the same structure as the memory cell, except that the state change portion is additionally provided thereto. As such, the program cell can be provided efficiently, as it can be designed the same as the memory cell in terms of the magnetic storage portion and others. The state change portion makes a transition to a fixed state based on an electrical change. Thus, the state change portion prevents program information from being rewritten by a magnetic noise or the like, and ensures stable storage of the program information.
1. A thin film magnetic memory device, comprising:
a plurality of switch portions setting signal transmission paths between a plurality of circuit blocks; and
a plurality of switch control portions provided corresponding to said plurality of switch portions, respectively, and each controlling corresponding one of said plurality of switch portions,
each of said switch control portions including first and second program cells having nonvolatile electric resistances, and
each of said switch control portions controlling said corresponding switch portion in accordance with a data signal based on the electric resistances of said first and second program cells.
2. The thin film magnetic memory device according to claim 1 , further comprising a data latch circuit provided corresponding to said first and second program cells and holding first and second program signals that are generated at the time of data read in accordance with the electric resistances of said first and second program cells, respectively.
3. The thin film magnetic memory device according to claim 1 , wherein
each of said first and second program cells includes
a magnetic storage portion having an electric resistance value that changes according to a magnetization direction corresponding to a data write current, and
a state change portion having an electric resistance value that fixedly changes from a first state to a second state in response to an access designation externally supplied.
4. The thin film magnetic memory device according to claim 1 , wherein said plurality of switch portions set said signal transmission paths of a field programmable gate array (FPGA).