Fabricating method for organic electro luminescence display device having a rib barrier of reverse taper shape and organic electro luminescence display device
View Patent ↗This invention relates to a fabricating method of an organic electro luminescence display device that is adaptive for simplifying a process by forming a barrier rib by use of a new material, and an organic electro luminescence display device using the same. A fabricating method of an organic electro luminescence display device according to an embodiment of the present invention includes: forming an anode electrode on an upper substrate; depositing ZnO on the entire surface of the upper substrate and forming a ZnO film by making the deposited ZnO grow crystals; forming a barrier rib with a reverse taper shape that divides an area where the organic light emitting layer is to be formed on the upper substrate by patterning the ZnO film; forming an organic light emitting layer in the cell area that is divided by the barrier rib; and forming a cathode electrode on the organic light emitting layer.
1. A fabricating method of an organic electro luminescence display device, comprising:
forming an anode electrode on an upper substrate;
depositing ZnO on the entire surface of the upper substrate and forming a ZnO film by making the deposited ZnO grow crystals;
forming a barrier rib with a reverse taper shape by over-etching the ZnO film;
depositing an insulation layer on the entire surface of the upper substrate on which the barrier rib is formed and forming a spacer separated from the barrier rib by patterning the insulation layer, wherein the barrier rib and the spacer divide an area of the upper substrate on which an organic light emitting layer is to be formed;
forming an organic light emitting layer in the cell area that is divided by the barrier rib and the spacer; and
forming a cathode electrode on the organic light emitting layer.
2. The fabricating method according to claim 1 , wherein the ZnO is deposited and grows at a temperature greater-than about 150° C.
3. The fabricating method according to claim 1 , wherein the ZnO film has a high distribution of an amorphous structure in a lower part and a high distribution of a crystalline structure in an upper part.
4. The fabricating method according to claim 1 , wherein the ZnO film is patterned by a photolithography process and a wet etching process.
5. The fabricating method according to claim 1 , further comprising:
forming an insulating film that exposes an area where an organic light emitting layer is to be formed on the anode electrode;
forming a thin film transistor array on a lower substrate that faces the upper substrate; and
bonding the upper substrate to the lower substrate.
6. The fabricating method according to claim 1 , wherein the step of forming the cathode electrode includes spreading an electrode material on the entire surface of the upper substrate where the barrier rib and the organic light emitting layer are formed.
7. The fabricating method according to claim 1 , wherein forming the thin film transistor array includes forming a drive thin film transistor including a drain electrode connected to the cathode electrode and a switch thin film transistor including a drain electrode connected to a gate electrode of the drive transistor.
8. The fabricating method according to claim 7 , wherein the spacer connects the cathode electrode to the drain electrode of the drive thin film transistor on the upper substrate.
9. The fabricating method according to claim 7 , wherein the cathode electrode is formed to encompass the spacer and is connected to the drain electrode of the drive thin film transistor.
10. The fabricating method according to claim 1 , further including forming a bus electrode that defines an area where the organic light emitting layer is to be formed on the upper substrate.
11. A fabricating method of an organic electro luminescence display device, comprising:
forming an anode electrode on an upper substrate;
forming an insulating film that exposes an area where an organic light emitting layer is to be formed on the anode electrode;
depositing ZnO on the entire surface of the insulating film and forming a ZnO film by making the deposited ZnO grow crystals, wherein the ZnO is deposited and grows at a temperature greater-than about 150° C. and wherein the ZnO film has a high distribution of an amorphous structure in a lower part and a high distribution of a crystalline structure in an upper part;
forming a barrier rib with a reverse taper shape by over-etching the ZnO film;
depositing an insulation layer on the entire surface of the upper substrate on which the barrier rib is formed and forming a spacer separated from the barrier rib by patterning the insulation layer, wherein the barrier rib and the spacer divide an area of the upper substrate on which an organic light emitting layer is to be formed;
forming an organic light emitting layer in the cell area that is divided by the barrier rib and the spacer;
forming a cathode electrode on the organic light emitting layer;
forming a thin film transistor array on a lower substrate that faces the upper substrate; and
bonding the upper substrate to the lower substrate.
12. The fabricating method according to claim 11 , wherein the ZnO film is patterned by a photolithography process and a wet etching process.