Manufacturing method of thin film device substrate
View Patent ↗Method of manufacturing a thin film device substrate wherein no trench fabrication is required to be applied onto the substrate surface, and a material which is impervious to light can be used, and the substrate can be peeled off quickly. Firstly, a peeling-off film, a silicon oxide film and an amorphous silicon film are formed in succession on a glass substrate, and the amorphous silicon film is irradiated from above to obtain a polycrystalline silicon film. Subsequently, using the polycrystalline silicon film as an active layer, a TFT is formed, and then a plastic substrate is bonded thereon, and finally the glass substrate is peeled off with the peeling-off film, to complete transfer of the TFT. Because the peeling-off film has a gap space, its etching rate is high. Therefore, it is unnecessary to form a trench for supplying an etchant on the surface of the glass substrate.
1. A method of manufacturing a thin film device substrate, comprising, in order, the steps of:
forming on a first substrate, a peeling-off film made of a porous film;
forming a semiconductor film on said peeling-off film;
forming a thin film transistor with said semiconductor film as an active layer thereof;
bonding a second substrate onto said thin film device; and
peeling off said first substrate at said peeling-off film by driving a wedge into said peeling-off film to break said porous film mechanically.
2. A method of manufacturing a thin film device substrate, comprising the steps of:
forming on a first substrate, a peeling-off film made of a porous film;
forming a semiconductor film on said peeling-off film;
bonding a second substrate onto said semiconductor film;
peeling off said first substrate at said peeling-off film by driving a wedge into said peeling-off film to break said porous film mechanically; and
forming a thin film transistor with said semiconductor film as an active layer thereof after peeling off said first substrate at said peeling-off film.