Reflection type liquid crystal display device with half tone exposure and method for making same
View Patent ↗A reflection type liquid crystal display device having excellent display capability even if the number of the photolithography process is reduced and a process for producing the device. A process includes the steps of (a) forming a source/drain wiring by using a first mask; (b) forming a thin film transistor region and gate wiring by using a second mask; (c) forming an opening for a transistor, in a passivation film by using a third mask; (d) forming a rough surface of the interlayer insulating film and to form an opening for the transistor by using a fourth mask by halftone exposure, and (e) forming a reflective metal which extend through the respective openings for the transistor in the passivation film and the interlayer insulating film so that it is electrically connected to the source wiring by using a fifth mask.
1. A method of making a reflection type liquid crystal display device comprising the steps of:
forming a source and a drain on an insulating substrate;
forming a thin film transistor and gate electrode wiring in a stack in which a silicon layer, a gate insulating film and a gate electrode layer are stacked in this order as viewed in a direction substantially normal to the substrate on surfaces of the source and drain and the substrate;
forming a passivation film on the insulating substrate, the passivation film having a first opening therethrough corresponding to a position of the source;
forming an interlayer insulating film on the passivation film;
roughening a surface of the interlayer insulating film;
forming a second opening through the interlayer insulating film in a position corresponding to the first opening,
wherein the steps of roughening the surface of the interlayer insulating film and of forming the second opening are carried out simultaneously;
forming a reflection electrode on the roughened surface of the interlayer insulating film and through the first and second openings to the source, the reflection electrode having a roughness corresponding to a roughness of the roughened surface of the interlayer insulating film and being electrically connected to the source;
forming a capacitor electrode on the insulating substrate simultaneously with the formation of the source and drain; and
forming a storage capacitor that includes the capacitor electrode simultaneously with the formation of the thin film transistor in a stack in which a silicon layer, gate insulating film and gate electrode layer are stacked in a direction normal to the insulating substrate on the insulating substrate,
wherein the passivation film has the storage capacitor formed thereon, has a third opening for the storage capacitor formed simultaneously with the formation of the first opening for the thin film transistor, wherein the third opening penetrates through the passivation film to the storage capacitor electrode;
wherein the interlayer insulating film has a fourth opening for the storage capacitor formed simultaneously with the formation of the rough surface so that it extends through the interlayer film; and
wherein the reflection electrode extends through the third and fourth openings to be electrically connected to the capacitor electrode.
2. A method of making a reflection type liquid crystal display device comprising the steps of:
forming a source and a drain on an insulating substrate;
forming a thin film transistor and gate electrode wiring in a stack in which a silicon layer, a gate insulating film and a gate electrode layer are stacked in this order as viewed in a direction substantially normal to the substrate on surfaces of the source and drain and the substrate;
forming a passivation film on the insulating substrate, the passivation film having a first opening therethrough corresponding to a position of the source;
forming an interlayer insulating film on the passivation film;
roughening a surface of the interlayer insulating film;
forming a second opening through the interlayer insulating film in a position corresponding to the first opening,
wherein the steps of roughening the surface of the interlayer insulating film and of forming the second opening are carried out simultaneously; and
forming a reflection electrode on the roughened surface of the interlayer insulating film and through the first and second openings to the source, the reflection electrode having a roughness corresponding to a roughness of the roughened surface of the interlayer insulating film and being electrically connected to the source,
wherein the steps of roughening the surface of the interlayer insulating film and of forming the second opening are carried out simultaneously by a photolithography and etching process utilizing half-tone exposure and two-times exposure.
3. A method of making a reflection type liquid crystal display device comprising the steps of:
forming a source and a drain on an insulating substrate;
forming a thin film transistor and gate electrode wiring in a stack in which a silicon layer, a gate insulating film and a gate electrode layer are stacked in this order as viewed in a direction substantially normal to the substrate on surfaces of the source and drain and the substrate;
forming a passivation film on the insulating substrate, the passivation film having a first opening therethrough corresponding to a position of the source;
forming an interlayer insulating film on the passivation film;
roughening a surface of the interlayer insulating film;
forming a second opening through the interlayer insulating film in a position corresponding to the first opening,
wherein the steps of roughening the surface of the interlayer insulating film and of forming the second opening are carried out simultaneously; and
forming a reflection electrode on the roughened surface of the interlayer insulating film and through the first and second openings to the source, the reflection electrode having a roughness corresponding to a roughness of the roughened surface of the interlayer insulating film and being electrically connected to the source,
wherein the rough surface of the interlayer insulating film and the second opening are formed by treating the substrate by a half-tone exposure method in which an exposure mask controls a transmissivity of light.
4. The method of claim 3 , wherein the exposure mask is formed from amorphous silicon deposited by PECVD, followed by patterning by photolithograpy and etching.
5. The method of claim 4 , wherein the amorphous silicon is deposited by the PECVD to a thickness of 0.15 μm.
6. The method of claim 4 , wherein the transmissivity of the amorphous silicon for light having a wavelength of 436 nm is controlled in a range of 100 to about 0.1% by changing a film thickness of the amorphous silicon in a range of 0.1 to 1.5 μm.
7. The method of claim 3 , wherein treating the substrate is under conditions of 0.2% of tetra methyl ammonium hydroxide, and temperature of 25° C. for 100 seconds.
8. The method of claim 3 , wherein the mask is configured to have a desired concave or convex shape formed on a surface of a reflection plate, a pitch of 2 to 30 μm, a circular form and a cross-section having an inclination angle of 30 degrees or less.
9. A method of making a reflection type liquid crystal display device, comprising:
forming a passivation film on an insulating substrate, the passivation film having a first opening therethrough corresponding to a position of the source;
forming an interlayer insulating film on the passivation film;
roughening a surface of the interlayer insulating film; and
forming a second opening through the interlayer insulating film in a position corresponding to the first opening,
wherein the steps of roughening the surface of the interlayer insulating film and of forming the second opening are carried out simultaneously; and
forming a reflection electrode on the roughened surface of the interlayer insulating film and through the first and second openings to the source, the reflection electrode having a roughness corresponding to a roughness of the roughened surface of the interlayer insulating film,
wherein the rough surface of the interlayer insulating film and the second opening are formed by treating the substrate by a halftone exposure method in which an amorphous silicon exposure mask controls a transmissivity of light utilizing half-tone exposure and two-times exposure.