IP Library Granted Patent US 7,403,365
Granted Patent B2
US 7,403,365 · App. 11/505,821 · Granted Jul 22, 2008

Over-current detection circuit and method for power-supply device

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,403,365
App. No.
11/505,821
Granted
Jul 22, 2008
Kind
B2
Abstract

An over-current detection circuit using the ON-voltage of a main MOSFET is provided, which is resistant to process variations of a main MOSFET and is not easily influenced by switching noise. Separately from a main MOSFET (Q 1 ), a sense MOSFET (Q 3 ) whose size is 1/m of the main MOSFET is provided and it is caused to be normally on. A DC ON-voltage generated when a current that is 1/m of an over-current value is caused to flow through the sense MOSFET is obtained as a reference voltage for over-current setting. The ON-voltage when the main MOSFET is on is sampled and held, and it is obtained as a DC voltage. These DC voltages are compared in a comparator (COMP).

Claims (24)

1. An over-current detection circuit for a power-supply device contained in a buck type DC-DC converter comprising:

a pair of power semiconductor switching components;

a driving means for the pair of power semiconductor switching components;

a pulse-width modulation type oscillator for supplying a driving signal to the driving means; and

an error amplifier for supplying an error signal with respect to a reference voltage to the oscillator,

wherein, separately from a high side power semiconductor switching component that is one of the pair of power semiconductor switching components, a sense power semiconductor switching component having a 1/m size of the high side power semiconductor switching component is provided,

wherein the circuit comprises a means for causing the sense power semiconductor switching component to be normally on, and a means for detecting an over-current by comparing, in a comparator, the ON-voltage obtained by causing a current that is 1/m of an over-current value to flow through the sense power semiconductor switching component, that is, the reference voltage for over-current detection, and a voltage obtained by applying the ON-voltage when the high side power semiconductor switching component is on to a sample-and-hold circuit comprised of a switch and a capacitor, wherein m refers to a positive integer.

2. The over-current detection circuit for a power-supply device according to claim 1 , wherein the high side power semiconductor switching component and the sense power semiconductor switching component are mounted on the same chip.

3. The over-current detection circuit for a power-supply device according to claim 1 , wherein the comparator comprises a pair of level-shift circuits and a differential pair circuit.

4. The over-current detection circuit for a power-supply device according to claim 1 , wherein a resistor is connected in series to a switch of the sample-and-hold circuit.

5. The over-current detection circuit for a power-supply device according to claim 1 , wherein a driving signal of the high side power semiconductor switching component is separated from that of the sense power semiconductor switching component, and wherein the driving period of the sense power semiconductor switching component is a first half of that of the high side power semiconductor switching component.

6. The over-current detection circuit for a power-supply device according to claim 5 , comprising:

an integrating circuit comprising R and C;

a differentiation circuit comprising C and R;

a bias circuit for applying a bias voltage to the differentiation circuit;

a comparator for comparing the output from the bias circuit and the output from the differentiation circuit; and

a two-input AND gate,

wherein the output signal of the circuit is used as a signal for generating a driving period of the sense power semiconductor switching component, wherein the output from the pair of power semiconductor switching component is provided as an input to the integrating circuit, the output from the comparator is provided as the input to the AND gate, and the driving signal of the high side power semiconductor switching component is provided as the other input to the AND gate.

7. The over-current detection circuit for a power-supply device according to claim 1 , wherein, instead of the means for causing the sense power semiconductor switching component to be normally on, the driving signal of the sense power semiconductor switching component is set wider than the driving period of the high side power semiconductor switching component.

8. An information processing equipment equipped with a buck type DC-DC converter, as a power-supply device, containing an over-current detection circuit for a power-supply device according to claim 1 .

9. The information processing equipment according to claim 8 , wherein the information processing equipment comprises a CPU, a memory, and a hard-disk drive for storing information in the memory as principal components, and wherein at least one of the components comprises the buck type DC-DC converter as a power supply.

10. An over-current detection method for a power-supply device used for a buck type DC-DC converter comprising a pair of power semiconductor switching components, a driving means for the pair of power semiconductor switching components, a pulse-width modulation type oscillator for supplying a driving signal to the driving means, and an error amplifier for supplying an error signal with respect to a reference voltage to the oscillator, wherein, separately from a high side power semiconductor switching component that is one of the pair of power semiconductor switching components, a sense power semiconductor switching component having a 1/m size of the high side power semiconductor switching component is provided, the method comprising:

a step of causing the sense power semiconductor switching component to be normally on; and,

a step of detecting an over-current by comparing, in a comparator, the ON-voltage obtained by causing a current that is 1/m of an over-current value to flow through the sense power semiconductor switching component, that is, the reference voltage for over-current detection, and a voltage obtained by applying the ON-voltage when the high side power semiconductor switching component is on to a sample-and-hold circuit comprised of a switch and a capacitor, wherein m refers to a positive integer.

Assignments (3)
CHANGE OF NAME Recorded Oct 6, 2017
From: GOOGLE INC.
To: GOOGLE LLC
Reel/Frame 044142/0357 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 4, 2013
From: HITACHI, LTD.
To: GOOGLE INC.
Reel/Frame 030555/0554 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 28, 2006
From: SASE, TAKASHI; KANOUDA, AKIHIKO; KAWAKUBO, YOSUKE; KURITA, KOZABURO
To: HITACHI, LTD.
Reel/Frame 018353/0287 →