Electronic grade metal nanostructures
View Patent ↗Methods for producing electronic grade metal nanostructures having low levels of contaminants are provided. Monolayer arrays, populations, and devices including such electronic grade nanostructures are described. In addition, novel methods and compositions for production of Group 10 metal nanostructures and for production of ruthenium nanostructures are provided, along with methods for recovering nanostructures from suspension.
1. A population of colloidal metal nanostructures, which colloidal nanostructures comprise a metal atom, wherein the metal atom is Ru, wherein in the nanostructures a ratio of the metal atom to each of Fe and Na atoms is greater than 5,000:1.
2. The population of claim 1 , wherein in the nanostructures the ratio of the metal atom to each of one or more, two or more, three or more, four or more, five or more, or six or more atoms selected from the group consisting of Cu, Cr, Zn, Ti, Mn, Au, and K is greater than 1,000:1.
3. The population of claim 1 , wherein in the nanostructures the ratio of the metal atom to each of Cu, Cr, Zn, Ti, Mn, Au, and K is greater than 1,000:1.
4. The population of claim 1 , wherein in the nanostructures the ratio of the metal atom to each of one or more atoms selected from the group consisting of Cu, Cr, Zn, Ti, Mn, Au, and K is greater than 5,000:1.
5. The population of claim 4 , wherein in the nanostructures the ratio of the metal atom to each of two or more, three or more, four or more, five or more, or six or more atoms selected from the group consisting of Cu, Cr, Zn, Ti, Mn, Au, and K is greater than 5,000:1.
6. The population of claim 4 , wherein in the nanostructures the ratio of the metal atom to each of Cu, Fe, Cr, Zn, Ti, Mn, Au, Na, and K is greater than 5,000:1.
7. The population of claim 1 , wherein in the nanostructures the ratio of the metal atom to each of one or more atoms selected from the group consisting of Cu, Fe, Cr, Zn, Ti, Mn, Au, Na, and K is greater than 10,000:1.
8. The population of claim 7 , wherein in the nanostructures the ratio of the metal atom to each of two or more, three or more, four or more, five or more, six or more, seven or more, or eight or more atoms selected from the group consisting of Cu, Fe, Cr, Zn, Ti, Mn, Au, Na, and K is greater than 10,000:1.
9. The population of claim 7 , wherein in the nanostructures the ratio of the metal atom to each of Cu, Fe, Cr, Zn, Ti, Mn, Au, Na, and K is greater than 10,000:1.
10. The population of claim 1 , wherein in the nanostructures the ratio of the metal atom to each of one or more atoms selected from the group consisting of Cu, Fe, Cr, Zn, Ti, Mn, Au, Na, and K is greater than 100,000:1.
11. The population of claim 10 , wherein in the nanostructures the ratio of the metal atom to each of two or more, three or more, four or more, five or more, six or more, seven or more, or eight or more atoms selected from the group consisting of Cu, Fe, Cr, Zn, Ti, Mn, Au, Na, and K is greater than 100,000:1.
12. The population of claim 10 , wherein in the nanostructures the ratio of the metal atom to each of Cu, Fe, Cr, Zn, Ti, Mn, Au, Na, and K is greater than 100,000:1.
13. The population of claim 10 , wherein in the nanostructures the ratio of the metal atom to Cu is greater than 100,000:1 and the ratio of the metal atom to Fe is greater than 100,000:1.
14. The population of claim 10 , wherein in the nanostructures the ratio of the metal atom to Na is greater than 100,000:1.
15. The population of claim 10 , wherein in the nanostructures the ratio of the metal atom to K is greater than 100,000:1.
16. The population of claim 1 , wherein in the nanostructures the ratio of the metal atom to Fe is greater than 10,000:1, the ratio of the metal atom to Zn is greater than 10,000:1, the ratio of the metal atom to Cu is greater than 50,000:1, and the ratio of the metal atom to K is greater than 50,000:1.
17. The population of claim 1 , wherein the nanostructures comprise substantially spherical nanocrystals or quantum dots.
18. A device comprising the population of claim 1 .
19. The device of claim 18 , wherein the device comprises a charge storage device, a memory device, or a photovoltaic device.
20. The population of claim 1 , wherein the nanostructures comprise nanocrystals.
21. A monolayer array of colloidal metal nanostructures, which colloidal nanostructures comprise a metal atom, wherein the metal atom is Ru, wherein a density of the metal atom in the array is greater than 1×10 15 atoms/cm 2 , and wherein a density in the array of each of Fe and Na atoms is less than 1×10 11 atoms/cm 2 .
22. The monolayer array of claim 21 , wherein the density in the array of each of one or more atoms selected from the group consisting of Cu, Cr, Zn, Ti, Mn, Au, and K is less than 1×10 11 atoms/cm 2 .
23. The monolayer array of claim 21 , wherein the density in the array of each of two or more atoms selected from the group consisting of Cu, Cr, Zn, Ti, Mn, Au, and K is less than 1×10 11 atoms/cm 2 .
24. The monolayer array of claim 21 , wherein the density in the array of each of three or more atoms selected from the group consisting of Cu, Cr, Zn, Ti, Mn, Au, and K is less than 1×10 11 atoms/cm 2 .
25. The monolayer array of claim 21 , wherein the density in the array of each of four or more, five or more, or six or more atoms selected from the group consisting of Cu, Cr, Zn, Ti, Mn, Au, and K is less than 1×10 11 atoms/cm 2 .
26. The monolayer array of claim 21 , wherein the density in the array of each of Cu, Fe, Cr, Zn, Ti, Mn, Au, Na, and K is less than 1×10 11 atoms/cm 2 .
27. The monolayer array of claim 21 , wherein Cu has a density in the array of less than 1×10 11 atoms/cm 2 .
28. The monolayer array of claim 21 , wherein Cu has a density in the array of less than 1×10 11 atoms/cm 2 and wherein K has a density in the array of less than 1×10 11 atoms/cm 2 .
29. The monolayer array of claim 21 , wherein the density in the array of each of one or more atoms selected from the group consisting of Cu, Fe, Cr, Zn, Ti, Mn, Au, Na, and K is less than 1×10 10 atoms/cm 2 .
30. The monolayer array of claim 21 , wherein the nanostructures comprise substantially spherical nanocrystals or quantum dots.
31. The monolayer array of claim 21 , wherein the array has a density greater than about 1×10 11 nanostructures/cm 2 or greater than about 1×10 12 nanostructures/cm 2 .
32. A device comprising the monolayer array of claim 21 .
33. The device of claim 32 , wherein the device comprises a charge storage device, a memory device, or a photovoltaic device.
34. The monolayer array of claim 21 , wherein the nanostructures comprise nanocrystals.
35. A composition comprising a population of ruthenium nanostructures, wherein the population exhibits a standard deviation in diameter of the nanostructures which is less than 30% of an average diameter of the nanostructures, and wherein the ruthenium nanostructures have at most about 1 sodium atom per 5×10 4 ruthenium atoms.
36. The composition of claim 35 , wherein the standard deviation is less than 20% of the average diameter.
37. The composition of claim 35 , wherein the nanostructures are quantum dots.