Highly filled thermoplastic composites

1. A composite material comprising a thermoplastic polymer matrix and a non-carbonaceous resistivity modifier dispersed in the thermoplastic polymer matrix, the composite material having a surface resistivity of about 1.0×10 4 ohm/sq to about 1.0×10 11 ohm/sq, at least a portion of a surface of the composite material having a surface roughness (Ra) not greater than about 500 nm, the composite material having a Young's modulus of at least 11.0 Gpa.

2. The composite material of claim 1 , wherein the surface roughness (Ra) is not greater than about 250 nm.

3. The composite material of claim 1 , wherein the thermoplastic polymer matrix includes polyamide, polyphenylsulfide, polycarbonate, polyether, polyketone, polyarylether ketone, or any combination thereof.

4. The composite material of claim 1 , wherein the thermoplastic polymer matrix includes a polymer having an ether bond between two monomers of the polymer.

5. The composite material of claim 4 , wherein the polymer includes polyarylether ketone.

6. The composite material of claim 5 , wherein the polyarylether ketone includes polyeteretherketone (PEEK).

7. The composite material of claim 1 , wherein the non-carbonaceous resistivity modifier is substantially monodispersed.

8. The composite material of claim 1 , wherein the surface resistivity is about 1.0×10 5 ohm/sq to about 1.0×10 9 ohm/sq.

9. The composite material of claim 1 , wherein the composite material exhibits a decay time of not greater than about 1.0 seconds for a 100V decay.

10. The composite material of claim 1 , wherein the non-carbonaceous resistivity modifier is an oxide, a carbide, a nitride, a boride, a sulfide, a silicide, a doped semiconductor, or any combination thereof.

11. The composite material of claim 10 , wherein the non-carbonaceous resistivity modifier is selected from the group consisting of NiO, FeO, MnO, Co 2 O 3 , Cr 2 O 3 , CuO, Cu 2 O, Fe 2 O 3 , Ga 2 O 3 , In 2 O 3 , GeO 2 , MnO 2 , TiO 2-x , RuO 2 , Rh 2 O 3 , V 2 O 3 , Nb 2 O 5 , Ta 2 O 5 , WO 3 , SnO 2 , ZnO, CeO 2 , TiO 2-x , ITO (indium-tin oxide), MgTiO 3 , CaTiO 3 , BaTiO 3 , SrTiO 3 , LaCrO 3 , LaFeO 3 , LaMnO 3 , YMnO 3 , MgTiO 3 F, FeTiO 3 , SrSnO 3 , CaSnO 3 , LiNbO 3 , Fe 3 O 4 , MgFe 2 O 4 , MnFe 2 O 4 , CoFe 2 O 4 , NiFe 2 O 4 ZnFe 2 O 4 , Fe 2 O 4 , CoFe 2 O 4, FeAl 2 O 4 , MnAl 2 O 4 , ZnAl 2 O 4 , ZnLa 2 O 4 , FeAl 2 O 4 , MgIn 2 O 4 , Mn In 2 O 4 , FeCr 2 O 4 , NiCr 2 O 4 , ZnGa 2 O 4 , LaTaO 4 , NdTaO 4 , BaFe 12 O 19 , 3Y 2 O 3 .5Fe 2 O 3 , Bi 2 Ru 2 O 7 , B 4 C, SiC, TiC, Ti(CN), Cr 4 C, VC, ZrC, TaC, WC, Si 3 N 4 , TiN, Ti(ON), ZrN, HfN, TiB 2 , ZrB 2 , CaB 6 , LaB 6 , NbB 2 , MoSi 2 , ZnS, Doped-Si, doped SiGe, III-V, II-VI semiconductors, and any combination thereof

12. The composite material of claim 1 , wherein the composite material comprises at least about 67 wt % of the non-carbonaceous resistivity modifier.

13. The composite material of claim 1 , wherein the composite material comprises not greater than about 95 wt % of the non-carbonaceous resistivity modifier.

14. The composite material of claim 1 , wherein the non-carbonaceous resistivity modifier has an average particle size of not greater than about 5 microns.