Organic thin film transistor and flat display device having the same
View Patent ↗An organic thin film transistor in which source and drain electrodes have a double layer structure to aid patterning of an organic semiconductor layer using a laser beam, and a flat display device having the organic thin film transistor. The organic thin film transistor includes: a gate electrode; a source electrode and a drain electrode insulated from the gate electrode; an organic semiconductor layer insulated from the gate electrode and having a portion patterned to electrically connect to the source and drain electrodes; and a protection layer formed on the source and drain electrodes.
1. A flat display device comprising:
an organic thin film transistor comprising:
a gate electrode,
a source electrode and a drain electrode insulated from the gate electrode,
protection layer formed directly on both the source and drain electrodes and comprising at least one material selected from the group consisting of oxidized Al, oxidized Mo and oxidized MoW, and
an organic semiconductor layer insulated from the gate electrode and having a portion patterned to electrically connect to the source and drain electrodes, the organic semiconductor layer being disposed directly on the protection layer; and
a display device electrically connected to the organic thin film transistor, wherein
the source and drain electrodes comprise at least one metal selected from the group consisting of Au, Pt and Pd, and
the work function of the protection layer is equal to the work function of the source and drain electrodes, due to the oxidation of the protection layer.
2. The flat display device of claim 1 , wherein the organic semiconductor layer is patterned by a laser beam.
3. A flat display device comprising:
a gate electrode;
a pixel electrode insulated from the gate electrode;
a source electrode and a drain electrode insulated from the gate electrode, one of the source electrode and drain electrode being electrically connected to the pixel electrode;
an organic semiconductor layer insulated from the gate electrode, exposing the pixel electrode, and patterned to be electrically connected to the source and drain electrodes; and
a protection layer formed directly on the source and drain electrode and comprising an oxide film selected from the group consisting of oxidized Al, oxidized Mo and oxidized MoW, wherein,
the organic semiconductor laver is disposed directly on the protection layer,
the source and drain electrodes comprise at least one metal selected from the group consisting of Au, Pt and Pd, and
the work function of the protection layer is equal to the work function of the source and drain electrodes, due to the oxidation of the protection layer.
4. The flat display device of claim 3 , wherein the organic semiconductor layer is patterned by a laser beam.
5. The flat display device of claim 3 , wherein the pixel electrode and the protection layer are formed in one unit.
6. The flat display device of claim 3 , wherein the pixel electrode is formed of at least one metal selected from the group consisting of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, and compounds thereof.
7. The flat display device of claim 6 , wherein the protection layer is formed on the pixel electrode.
8. The flat panel display device of claim 3 , wherein the protection layer and the pixel electrode are formed of the same material.
9. The flat panel display device of claim 3 , wherein the protection layer is formed directly on the pixel electrode.