Thin-film transistor substrate and liquid crystal display device having the same
View Patent ↗A reduced power thin-film transistor (TFT) array substrate includes a display section, a peripheral section, a driving circuit section and a driver chip. The display section includes a high definition section and a low definition section. The peripheral section surrounds the display section. The driving circuit section is formed on the peripheral section and is configured to provide the high definition section with a plurality of first gate signals. The driver chip is mounted on the peripheral section to provide the low definition section with a plurality of second gate signals.
1. A thin-film transistor (TFT) array substrate, comprising:
a display section including a high definition section and a low definition section;
a peripheral section surrounding the display section;
a driving circuit section formed on the peripheral section configured to provide the high definition section with a plurality of first gate signals; and
a driver chip mounted on the peripheral section configured to provide the low definition section with a plurality of second gate signals.
2. The TFT array substrate of claim 1 , wherein the driving circuit section comprises an amorphous silicon thin-film transistor.
3. The TFT array substrate of claim 1 , further comprising a signal wiring formed along a first side of the display section to conduct a gate driving signal from the driver chip to the low definition section, the driving circuit section being formed along at least a second side of the display section.
4. The TFT array substrate of claim 1 , wherein the low definition section has a first aperture ratio and the high definition section has a second aperture ratio, the first aperture ratio being higher than the second aperture ratio.
5. The TFT array substrate of claim 1 , wherein the low definition section includes a low definition pixel that has a first area and the high definition section includes a high definition pixel that has a second area, the first area being larger than the second area.
6. A thin-film transistor (TFT) array substrate that operates in a full operation mode or in a standby mode, the thin-film transistor (TFT) array substrate comprising:
a base substrate;
a main display section formed on the base substrate, the main display section being configured to operate in the full operation mode;
a sub display section formed on the base substrate, the sub display section being configured to operate in the standby mode;
a driving circuit section directly formed on the base substrate, the driving circuit section being configured to provide the main display section with a plurality of first gate signals; and
a driver chip mounted on the base substrate, the driver chip being configured to provide the sub display section with a plurality of second gate signals.
7. The TFT array substrate of claim 6 , wherein the main display section has a main display resolution and the sub display section has a sub display resolution, the main display section resolution being higher than the sub display resolution.
8. The TFT array substrate of claim 6 , wherein the driving circuit section comprises an amorphous silicon thin-film transistor.
9. The TFT array substrate of claim 6 , further comprising a signal wiring formed along a first side of the display section to conduct a gate driving signal from the driver chip to the sub display section, the driving circuit section being formed along at least a second side of the display section.
10. The TFT array substrate of claim 6 , wherein the sub display section has a first aperture ratio and the main display section has a second aperture ratio, the first aperture ratio being higher than the second aperture ratio.
11. The TFT array substrate of claim 6 , wherein the sub display section includes a low definition pixel that has a first area and the main display section includes a high definition pixel that has a second area, the first area being larger than the second area.
12. A thin-film transistor (TFT) array substrate comprising:
a display section having a plurality of regions;
a peripheral section surrounding the display section; and
a driving circuit section formed on the peripheral section, the driving circuit section including an amorphous silicon thin-film transistor and providing at least one of the regions of the display section with a plurality of gate signals.
13. The TFT array substrate of claim 12 , wherein the display section comprises a high definition section and a low definition section, the driving circuit section providing the high definition section with a first gate signal.
14. The TFT array substrate of claim 13 , further comprising:
a driver chip mounted on the peripheral section, the driver chip providing the low definition section with a second gate signal; and
a signal wiring formed along a first side of the display section to conduct a gate driving signal from the driver chip to the low definition section, the driving circuit section being formed along at least a second side of the display section.
15. The TFT array substrate of claim 12 , wherein the display section comprises a main display section displaying a main image in a full driving mode, and a sub display section displaying a sub image in a standby mode, the driving circuit section providing the main display section with a first gate signal.
16. The TFT array substrate of claim 15 , further comprising:
a driver chip mounted on the peripheral section, the driver chip providing the sub display section with a second gate signal; and
a signal wiring formed along at least a first side of the display section to conduct a gate driving signal from the driver chip to the sub display section, the driving circuit section being formed along at least a second side of the display section.
17. A thin-film transistor (TFT) array substrate comprising:
a display section having a plurality of regions;
a peripheral section surrounding the display section; and
a driving circuit section integrally formed with the TFT substrate, the driving circuit section providing one of the regions of the display section with a first gate signal.
18. The TFT array substrate of claim 17 , wherein the display section comprises a high definition region and a low definition region, the driving circuit section providing the high definition region with the first gate signal.
19. The TFT array substrate of claim 18 , further comprising:
a driver chip mounted on the peripheral section, the driver chip providing the low definition region with a second gate signal; and
a signal wiring formed along at least a first side of the display section to conduct a gate driving signal from the driver chip to the sub display section, the driving circuit section being formed along at least a second side of the display section.
20. The TFT array substrate of claim 17 , wherein the display section comprises:
a main display section operating in a full operation mode; and
a sub display section operating in a standby mode, the driving circuit section providing the main display section with the first gate signal.
21. The TFT array substrate of claim 20 , further comprising:
a driver chip mounted on the peripheral section, the driver chip providing the sub display section with a second gate signal; and
a signal wiring formed along at least a first side of the display section, the signal wiring conducting a gate driving signal from the driver chip to the sub display section, the driving circuit section being formed along at least a second side of the display section.
22. The TFT array substrate of claim 17 , wherein the driving circuit section comprises an amorphous silicon thin-film transistor.
23. A thin-film transistor (TFT) array substrate comprising:
a substrate including a display section having a first display section displaying a first image, and a second display section displaying a second image;
a driver chip providing the first display section with a first gate signal;
a signal wiring formed along at least a first side of the first and second display sections, the signal wiring conducting the first gate signal from the driver chip to the first display section; and
a driving circuit section formed along at least a second side of the display section, the driving circuit section providing the second display section with a second gate signal.
24. The TFT array substrate of claim 23 , wherein the driving circuit section comprises an amorphous silicon thin-film transistor.
25. The TFT array substrate of claim 23 , wherein the first display section has a first resolution and the second display section has a second resolution, the first resolution being lower than the second resolution.
26. The TFT array substrate of claim 23 , wherein the first display section has a first aperture ratio and the second display section has a second aperture ratio, the first aperture ratio being higher than the second aperture ratio.
27. A thin-film transistor (TFT) array substrate comprising:
a display section including a first display section and a second display section;
a peripheral section surrounding the display section;
a first driving circuit section formed on a portion of the peripheral section adjacent to the first display section, the first driving circuit section providing a first gate signal to the first display section; and
a second driving circuit section formed on a portion of the peripheral section adjacent to the second display section, the second driving section providing a second gate signal to the second display section.
28. The TFT array substrate of claim 27 , wherein the first and second driving circuit sections comprise an amorphous silicon thin-film transistor.
29. The TFT array substrate of claim 27 , wherein the first display section has a first resolution and the second display section has a second resolution, the first resolution being higher than the second resolution.
30. The TFT array substrate of claim 27 , wherein the first display section comprises a plurality of gate lines formed thereon, and
the first driving circuit section comprises:
a first gate driving section providing odd-numbered gate lines of the plurality of gate lines with the first gate signal; and
a second gate driving section providing even-numbered gate lines of the plurality of gate lines with the first gate signal.
31. The TFT array substrate of claim 30 , wherein the first gate driving section is formed at a first peripheral region of the peripheral section, and
the second gate driving section is formed at a second peripheral region disposed oppositely from the first peripheral region with respect to the display section.
32. The TFT array substrate of claim 27 , wherein the second display section comprises a plurality of gate lines formed thereon, and
the second driving section comprises:
a third gate driving section providing odd-numbered gate lines of the plurality of gate lines with the second gate signal; and
a fourth gate driving section providing even-numbered gate lines of the plurality of gate lines with the second gate signal.
33. The TFT array substrate of claim 32 , wherein the third gate driving section is formed at a first peripheral region of the peripheral section, and
the fourth gate driving section is formed at a second peripheral region disposed oppositely from the first peripheral region with respect to the display section.
34. A liquid crystal display (LCD) device comprising:
a TFT array substrate comprising a plurality pixels that are arranged in a matrix configuration and defined by a plurality of gate lines and a plurality of data lines, each of the pixels comprising a thin-film transistor that is electrically connected to one of the plurality of gate lines and one of the plurality of data lines;
an opposing substrate that is combined with the TFT substrate such that the opposing substrate faces the TFT array substrate; and
a liquid crystal layer disposed between the TFT array substrate and the opposing substrate, wherein the TFT array substrate further comprises:
a display section including a plurality of regions;
a peripheral section surrounding the display section; and
a driving circuit section integrally formed with the TFT array substrate, the driving circuit section providing at least one of the regions of the display section with a first gate signal.
35. The LCD device of claim 34 , further comprising:
a selectively reflecting film configured to reflect at least a portion of light from an incident light beam, and transmit a remaining portion of the light.
36. The LCD device of claim 34 , wherein the driving circuit section comprises an amorphous silicon thin-film transistor.
37. The LCD device of claim 34 , wherein the display section comprises a high definition region and a low definition region, the driving circuit section providing the high definition region with the first gate signal.
38. The LCD device of claim 37 , wherein the low definition region has a first aperture ratio and the high definition region has a second aperture ratio, the first aperture ratio being higher than the second aperture ratio.
39. The LCD device of claim 37 , wherein the TFT array substrate further comprises:
a driver chip mounted on the peripheral section, the driver chip providing the low definition region with a second gate signal; and
a signal wiring formed along at least a first side of the display section, the signal wiring conducting a gate driving signal from the driver chip to the low definition region, the driving circuit section being formed along at least a second side of the display section.
40. The LCD device of claim 34 , wherein the display section comprises:
a main display section displaying a main image in a full operation mode; and
a sub display section displaying a sub image in a standby mode, the driving circuit section providing the main display section with the first gate signal.
41. The LCD device of claim 40 , wherein the TFT array substrate further comprises:
a driver chip mounted on the peripheral section, the driver chip providing the sub display section with a second gate signal; and
a signal wiring formed along at least a first side of the display section, the signal wiring conducting a gate driving signal from the driver chip to the sub display section, the driving circuit section being formed along at least a second side of the display section.
42. A liquid crystal display (LCD) device, comprising:
an LCD panel comprising:
a TFT array substrate comprising a display section and a peripheral section surrounding the display section, the peripheral section including a plurality of driving circuit sections formed thereon, the driving circuit sections providing the display section with a gate signal;
an opposing substrate combined with the TFT array substrate such that the opposing substrate faces the TFT array substrate; and
a liquid crystal layer disposed between the TFT array substrate and the opposing substrate; and
a driver chip providing the driving circuit sections with a gate driving signal.
43. The LCD device of claim 42 , wherein the driving circuit sections comprise an amorphous silicon thin-film transistor.
44. The LCD device of claim 42 , wherein the display section comprises:
a first display section having a high resolution; and
a second display section having a low resolution.
45. The LCD device of claim 44 , wherein the driver chip drives the first display section and the second display section in a full operation mode, the driver chip driving only the second display section in a standby mode.
46. The LCD device of claim 45 , wherein the first display section displays a main image, the second display section displaying a sub image in the full operation mode.
47. The LCD device of claim 45 , wherein both of the first and second display section display a main image.
48. The LCD device of claim 45 , wherein the second display section displays a sub image in the standby mode.
49. The LCD device of claim 42 , wherein the driving circuit sections comprise:
a first driving section formed on a portion of the peripheral section adjacent to the first display section, the first driving section providing a plurality of gate lines formed in the first display section with a first gate signal; and
a second driving section formed on a portion of the peripheral section adjacent to the second display section, the second driving section providing a plurality of gate lines formed in the second display section with a second gate signal.
50. The LCD device of claim 49 , wherein the first driving section comprises:
a first gate driving section providing odd-numbered gate lines with the first gate signal; and
a second gate driving section providing even-numbered gate lines with the first gate signal.
51. The LCD device of claim 49 , wherein the second driving section comprises:
a third gate driving section providing odd-numbered gate lines with the second gate signal; and
a fourth gate driving section providing even-numbered gate lines with the second gate signal.