IP Library Granted Patent US 7,348,122
Granted Patent B2
US 7,348,122 · App. 11/511,375 · Granted Mar 25, 2008

Photosensitive resin composition and method for manufacturing semiconductor device using the same

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Quick Facts
Patent No.
US 7,348,122
App. No.
11/511,375
Granted
Mar 25, 2008
Kind
B2
Abstract

A photosensitive resin composition comprising: a quinone diazide sulfonic acid ester of a phenol compound represented by formula (I) as defined in the specification; and a polybenzoxazole precursor, and a method for manufacturing a semiconductor device using the same

Claims (32)

1. A photosensitive resin composition comprising:

a quinone diazide sulfonic acid ester of a phenol compound represented by formula (I); and

a polybenzoxazole precursor:

wherein R a1 to R a3 each independently represents an alkyl group, a cyclic alkyl group, an aryl group, an aralkyl group, an alkoxy group, a halogen atom, an acyl group, an acyloxy group, an alkoxycarbonyl group or an alkenyl group;

R b1 to R b4 each independently represents an alkyl group, and R b1 and R b2 , or R b3 and R b4 may combine with each other to form a ring; and

l, m and n each independently represents an integer of from 0 to 3.

2. The photosensitive resin composition according to claim 1 ,

wherein the polybenzoxazole precursor is a polybenzoxazole precursor polymer (G) having a following structure:

wherein Ar 1 is a tetravalent aromatic group, an aliphatic group or a heterocyclic group or a mixed group thereof;

Ar 2 , which may contain silicon or not, is a bivalent aromatic group, a heterocyclic group, an alicyclic group or an aliphatic group;

Ar 3 is a bivalent aromatic group, an aliphatic group or a heterocyclic group or a mixed group thereof;

x represents 5 to 1000; and

y represents 0 to 900.

3. The photosensitive resin composition according to claim 2 ,

wherein the polybenzoxazole precursor is a polybenzoxazole precursor (F) obtained by reacting the polybenzoxazole precursor polymer (G) with a diazoquinone to partially cap hydroxyl groups with the diazoquinone:

wherein Ar 1 , Ar 2 and Ar 3 are as defined in the polybenzoxazole precursor polymer (G);

x represents 5 to 1000;

y represents 0 to 900;

b represents 0 to 50; and

Z represents a diazoquinone group.

4. The photosensitive resin composition according to claim 1 , which further comprises at least one of a diazoquinone compound and a dihydropyridine compound.

5. The photosensitive resin composition according to claim 1 , which further comprises a solvent,

wherein the quinone diazide sulfonic acid ester of the phenol compound and the polybenzoxazole precursor are dissolved in the solvent.

6. The photosensitive resin composition according to claim 5 ,

wherein the solvent is at least one selected from the group consisting of N-methylpyrrolidone, γ-butyrolactone, N,N-dimethylacetamide, dimethyl-2-piperidone and N,N-dimethylformamide.

7. The photosensitive resin composition according to claim 1 , which further comprises an adhesion promoter.

8. A method for manufacturing a semiconductor device comprising:

applying a photosensitive resin composition according to claim 1 onto a semiconductor element, so as to form a coated semiconductor element;

prebaking the coated semiconductor element;

exposing the prebaked semiconductor element;

developing the exposed semiconductor element; and

heating the developed exposed semiconductor element.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 15, 2007
From: FUJIFILM HOLDINGS CORPORATION (FORMERLY FUJI PHOTO FILM CO., LTD.)
To: FUJIFILM CORPORATION
Reel/Frame 018904/0001 →