Photosensitive resin composition and method for manufacturing semiconductor device using the same
View Patent ↗A photosensitive resin composition comprising: a quinone diazide sulfonic acid ester of a phenol compound represented by formula (I) as defined in the specification; and a polybenzoxazole precursor, and a method for manufacturing a semiconductor device using the same
1. A photosensitive resin composition comprising:
a quinone diazide sulfonic acid ester of a phenol compound represented by formula (I); and
a polybenzoxazole precursor:
wherein R a1 to R a3 each independently represents an alkyl group, a cyclic alkyl group, an aryl group, an aralkyl group, an alkoxy group, a halogen atom, an acyl group, an acyloxy group, an alkoxycarbonyl group or an alkenyl group;
R b1 to R b4 each independently represents an alkyl group, and R b1 and R b2 , or R b3 and R b4 may combine with each other to form a ring; and
l, m and n each independently represents an integer of from 0 to 3.
2. The photosensitive resin composition according to claim 1 ,
wherein the polybenzoxazole precursor is a polybenzoxazole precursor polymer (G) having a following structure:
wherein Ar 1 is a tetravalent aromatic group, an aliphatic group or a heterocyclic group or a mixed group thereof;
Ar 2 , which may contain silicon or not, is a bivalent aromatic group, a heterocyclic group, an alicyclic group or an aliphatic group;
Ar 3 is a bivalent aromatic group, an aliphatic group or a heterocyclic group or a mixed group thereof;
x represents 5 to 1000; and
y represents 0 to 900.
3. The photosensitive resin composition according to claim 2 ,
wherein the polybenzoxazole precursor is a polybenzoxazole precursor (F) obtained by reacting the polybenzoxazole precursor polymer (G) with a diazoquinone to partially cap hydroxyl groups with the diazoquinone:
wherein Ar 1 , Ar 2 and Ar 3 are as defined in the polybenzoxazole precursor polymer (G);
x represents 5 to 1000;
y represents 0 to 900;
b represents 0 to 50; and
Z represents a diazoquinone group.
4. The photosensitive resin composition according to claim 1 , which further comprises at least one of a diazoquinone compound and a dihydropyridine compound.
5. The photosensitive resin composition according to claim 1 , which further comprises a solvent,
wherein the quinone diazide sulfonic acid ester of the phenol compound and the polybenzoxazole precursor are dissolved in the solvent.
6. The photosensitive resin composition according to claim 5 ,
wherein the solvent is at least one selected from the group consisting of N-methylpyrrolidone, γ-butyrolactone, N,N-dimethylacetamide, dimethyl-2-piperidone and N,N-dimethylformamide.
7. The photosensitive resin composition according to claim 1 , which further comprises an adhesion promoter.
8. A method for manufacturing a semiconductor device comprising:
applying a photosensitive resin composition according to claim 1 onto a semiconductor element, so as to form a coated semiconductor element;
prebaking the coated semiconductor element;
exposing the prebaked semiconductor element;
developing the exposed semiconductor element; and
heating the developed exposed semiconductor element.