Solid-state imaging device, drive method of solid-state imaging device, and imaging apparatus
View Patent ↗A solid-state imaging device that includes: a pixel array section configured by an array of a unit pixel, including an optoelectronic conversion section that subjects an incoming light to optoelectronic conversion and stores therein a signal charge, a transfer transistor that transfers the signal charge stored in the optoelectronic conversion section, a charge-voltage conversion section that converts the signal charge provided by the transfer transistor into a signal voltage, and a reset transistor that resets a potential of the charge-voltage conversion section; and voltage setting means for setting a voltage of a well of the charge-voltage conversion section to be negative.
1. A solid-state imaging device, comprising:
a pixel array section including an array of a unit pixels, each pixel including an optoelectronic conversion section that performs optoelectronic conversion on incoming light and stores a signal charge, a transfer transistor that transfers the signal charge stored by the optoelectronic conversion section, a charge-voltage conversion section that converts the signal charge provided by the transfer transistor into a signal voltage, and a reset transistor that resets a potential of the charge-voltage conversion section; and
a voltage setting unit for setting a voltage of a well of the charge-voltage conversion section to be negative when the reset transistor resets a potential of the charge-voltage conversion section, and wherein the voltage of the well of the charge converting section is set to be greater than a negative voltage after the reset operation and during and after a transfer operation.
2. The solid-state imaging device according to claim 1 , wherein the reset transistor is a depletion transistor.
3. The solid-state imaging device according to claim 1 , wherein
a potential barrier below a gate of the transfer transistor is higher than an overflow path of the optoelectronic conversion section.
4. The solid-state imaging device according to claim 1 , further comprising
means for reducing a voltage to be applied to a gate of the transfer transistor when the voltage setting means sets the voltage of the well to be negative.
5. The solid-state imaging device according to claim 1 , wherein
the unit pixel further includes an amplifier transistor that receives an input of a signal of the charge-voltage conversion section, and
when the amplifier transistor outputs the signal of the charge-voltage conversion section, the voltage setting means sets the voltage of the well to be higher than a reset voltage of the charge-voltage conversion section.
6. A solid-state imaging device, comprising:
a pixel array section including an array of a unit pixels, each pixel including an optoelectronic conversion section that performs optoelectronic conversion on incoming light and stores a signal charge, a transfer transistor that transfers the signal charge stored by the optoelectronic conversion section, a charge-voltage conversion section that converts the signal charge provided by the transfer transistor into a signal voltage, a reset transistor that resets a potential of the charge-voltage conversion section, and an amplifier transistor that receives an input of a signal of the charge-voltage conversion section; and
voltage setting unit for setting, when the amplifier transistor outputs the signal of the charge-voltage conversion section, a voltage of a well to be higher than a reset voltage of the charge-voltage conversion section; and wherein the voltage setting unit sets the voltage of the well to be negative when the reset transistor resets the potential of the charge-voltage conversion section, and wherein the voltage of the well of the charge converting section is set to be greater than a negative voltage after the reset operation and during and after a transfer operation.
7. A drive method for driving a solid-state imaging device, the imaging device including: a pixel array section including an array of unit pixels, each unit pixel including an optoelectronic conversion section that performs optoelectronic conversion on incoming light and stores a signal charge, a transfer transistor that transfers the signal charge stored by the optoelectronic conversion section, a charge-voltage conversion section that converts the signal charge provided by the transfer transistor into a signal voltage, and a reset transistor that resets a potential of the charge-voltage conversion section, the method comprising:
setting a voltage of a well to be negative when the reset transistor resets a potential of the charge-voltage conversion section, and
transferring the signal charge from the optoelectronic conversion section to the charge-voltage conversion section, wherein the voltage of the well of the charge converting section is set to be greater than a negative voltage after the reset operation and during and after a transfer operation.
8. A drive method for driving a solid-state imaging device, the imaging device including: a pixel array section including an array of a unit pixels, each unit pixel including an optoelectronic conversion section that performs optoelectronic conversion on incoming light and stores a signal charge, a transfer transistor that transfers the signal charge stored by the optoelectronic conversion section, a charge-voltage conversion section that converts the signal charge provided by the transfer transistor into a signal voltage, a reset transistor that resets a potential of the charge-voltage conversion section, and an amplifier transistor that receives an input of a signal of the charge-voltage conversion section, the method comprising:
setting a voltage of a well to be higher than a reset voltage of the charge-voltage conversion section when the amplifier transistor outputs the signal of the charge-voltage conversion section; and wherein a voltage setting unit sets the voltage of the well to be negative when the reset transistor resets the potential of the charge-voltage conversion section, and wherein the voltage of the well of the charge converting section is set to be greater than a negative voltage after the reset operation and during and after a transfer operation.
9. An imaging apparatus, comprising:
a solid-state imaging device; and
an optical system that guides a light from an object onto an imaging surface of the solid-state imaging device, wherein
the solid-state imaging device includes:
a pixel array of unit pixels, each unit pixel including an optoelectronic conversion section that performs optoelectronic conversion on incoming light and stores a signal charge, a transfer transistor that transfers the signal charge stored by the optoelectronic conversion section, a charge-voltage conversion section that converts the signal charge provided by the transfer transistor into a signal voltage, and a reset transistor that resets a potential of the charge-voltage conversion section; and
voltage setting unit for setting a voltage of a well of the charge-voltage conversion section to be negative when the reset transistor resets a potential of the charge-voltage conversion section, and wherein the voltage of the well of the charge converting section is set to be greater than a negative voltage after the reset operation and during and after a transfer operation.
10. An imaging apparatus, comprising:
a solid-state imaging device; and
an optical system that guides a light from an object onto an imaging surface of the solid-state imaging device, wherein
the solid-state imaging device includes:
a pixel array of unit pixels, each unit pixel including an optoelectronic conversion section that performs optoelectronic conversion on incoming light and stores a signal charge, a transfer transistor that transfers the signal charge stored by the optoelectronic conversion section, a charge-voltage conversion section that converts the signal charge provided by the transfer transistor into a signal voltage, a reset transistor that resets a potential of the charge-voltage conversion section, and an amplifier transistor that receives an input of a signal of the charge-voltage conversion section; and
voltage setting unit for setting a voltage of a well to be higher than a reset voltage of the charge-voltage conversion section when the amplifier transistor outputs the signal of the charge-voltage conversion section; and wherein the voltage setting unit sets the voltage of the well to be negative when the reset transistor resets the potential of the charge-voltage conversion section, and the voltage of the well of the charge converting section is set to be greater than a negative voltage after the reset operation and during and after a transfer operation.
11. A solid-state imaging device, comprising:
a pixel array of unit pixels, each unit pixel including an optoelectronic conversion section that performs optoelectronic conversion and stores a signal charge, a transfer transistor that transfers the signal charge stored by the optoelectronic conversion section, a charge-voltage conversion section that converts the signal charge provided by the transfer transistor into a signal voltage, and a reset transistor that resets a potential of the charge-voltage conversion section; and
a voltage setting section configured to set a voltage of a well of the charge-voltage conversion section to be negative when the reset transistor resets a potential of the charge-voltage conversion section, and wherein the voltage of the well of the charge converting section is set to be greater than a negative voltage after the reset operation and during and after a transfer operation.