Organic photoelectric conversion device and stack type photoelectric conversion device
An organic photoelectric conversion device comprising; a lower electrode; an organic layer; and an upper electrode provided in this order, in which at least one of the lower electrode and the upper electrode is a transparent electrode and an electron is collected in a side of one of the lower electrode and the upper electrode and a hole is collected in a side of other of the lower electrode and the upper electrode so as to read out photocurrent, wherein the electrode in the side of collecting an electron is the transparent electrode and has a word function of 4.5 eV or less.
1 . An organic photoelectric conversion device comprising; a lower electrode; an organic layer; and an upper electrode provided in this order, in which at least one of the lower electrode and the upper electrode is a transparent electrode, and an electron is collected in a side of one of the lower electrode and the upper electrode and a hole is collected in the other side of the lower electrode and the upper electrode so as to read out photocurrent, wherein the electrode in the side of collecting an electron is the transparent electrode and has a work function of 4.5 eV or less.
2 . The organic photoelectric conversion device according to claim 1 , wherein both the lower electrode and the upper electrode are a transparent electrode.
3 . The organic photoelectric conversion device according to claim 1 , wherein the electrode in the side of collecting a hole has a work function of 4.5 eV or more.
4 . The organic photoelectric conversion device according to claim 1 , wherein the transparent electrode in the side of collecting an electron is a transparent electrode including a metal oxide layer and a metal layer having a work function of 4.5 eV or less, so that the metal oxide layer, the metal layer and the organic layer are provided in this order.
5 . The organic photoelectric conversion device according to claim 4 , wherein the metal oxide layer is a layer comprising ITO.
6 . The organic photoelectric conversion device according to claim 4 , wherein the metal layer is a layer containing In, Ag or Mg.
7 . The organic photoelectric conversion device according to claim 4 , wherein the metal layer has a thickness of from 0.5 to 10 nm.
8 . The organic photoelectric conversion device according to claim 1 , wherein the transparent electrode in the side of collecting an electron comprises Cs-doped ITO.
9 . The organic photoelectric conversion device according to claim 1 , wherein the transparent electrode in the side of collecting an electron comprises AZO.
10 . The organic photoelectric conversion device according to claim 1 , wherein the transparent electrode in the side of collecting an electron is a lower electrode resulting from a surface treatment of ITO formed on a substrate by immersing it in an alkaline solution.
11 . The organic photoelectric conversion device according to claim 1 , wherein the transparent electrode in the side of collecting an electron is a lower electrode resulting from a surface treatment of ITO formed on a substrate by sputtering it with Ar ions or Ne ions.
12 . The organic photoelectric conversion device according to claim 1 , wherein the organic layer contains a material having a quinacridone skeleton.
13 . A photoelectric conversion imaging device comprising: the organic photoelectric conversion device according to claim 1; and an Si substrate having a CCD or CMOS signal transfer circuit, wherein one of the lower electrode and the upper electrode of the organic photoelectric conversion device is connected to the signal transfer circuit so as to read out a signal.
14 . A photoelectric conversion device comprising: the organic photoelectric conversion device according to claim 1; and an Si substrate having a photodiode provided in an upper part thereof.
15 . The photoelectric conversion device according to claim 14 , wherein the photodiode including a plural number of a first conductive region and a second conductive region which is of a conductive type opposite to the first conductive region, and a junction face between the first conductive region and the second conductive region is formed in a depth suitable for photoelectrically converting mainly lights of any two wavelength regions of blue, green and red lights, respectively.
16 . The photoelectric conversion device according to claim 14 , wherein a plural number of the organic photoelectric conversion devices are stacked via an insulating layer.
17 . A photoelectric conversion imaging device comprising the photoelectric conversion device according to claim 14 , wherein the Si substrate has a CCD or CMOS signal transfer circuit, and the lower electrode or the upper electrode of the organic photoelectric conversion device is connected to the signal transfer circuit so as to read out a signal.