Semiconductor device package with improved cooling
View Patent ↗A chip scale package has a semiconductor MOSFET die which has a top electrode surface covered with a layer of a photosensitive liquid epoxy which is photolithographically patterned to expose portions of the electrode surface and to act as a passivation layer and as a solder mask. A solderable contact layer is then formed over the passivation layer. The individual die are mounted drain side down in a metal clip or can with the drain electrode disposed coplanar with a flange extending from the can bottom. The metal clip or drain clip has a plurality, a parallel spaced fins extending from its outwardly facing surface.
1. A semiconductor device comprising:
a semiconductor die having a first electrode disposed on a first major surface thereof and a second electrode disposed on a second major surface thereof;
an electrically conductive web portion having a first major surface electrically connected to said first electrode;
a plurality of heat conductive structures extending away from a second major surface of said web portion, said second major surface of said web portion being opposite to its first major surface; and
at least one conductive post extending from an edge of said web portion in a direction away from said first major surface of said web portion wherein said second electrode of said semiconductor die is adapted to be directly connected electrically and mechanically to a conductive pad and said conductive post includes a connection surface for electrical and mechanical connection to another conductive pad so that said package semiconductor die may become externally connectable to a substrate having said conductive pads with a conductive adhesive without the necessity for an auxiliary element for external connection.
2. A semiconductor device according to claim 1 , wherein said electrically conductive web portion is electrically connected to said first electrode by a layer of conductive adhesive.
3. A semiconductor device according to claim 2 , wherein said conductive adhesive comprises of solder.
4. A semiconductor device according to claim 2 , wherein said conductive adhesive comprises of conductive epoxy.
5. A semiconductor device according to claim 1 , wherein said plurality of heat conductive structures and said at least one conductive post are integral with said electrically conductive web portion thereby forming a unitary body.
6. A semiconductor device according to claim 5 , wherein said unitary body comprises a thermally conductive material.
7. A semiconductor device according to claim 5 , wherein said unitary body comprises one of aluminum and a metal matrix polymer.
8. A semiconductor device according to claim 1 , further comprising at least another conductive post extending from another edge of said web portion in a direction away from said first major surface of said web portion.
9. A semiconductor device according to claim 1 , wherein said semiconductor die is a power switching device.
10. A semiconductor device according to claim 9 , wherein said power switching device is a MOSFET.
11. A semiconductor device according to claim 10 , wherein said drain electrode of said MOSFET is electrically connected to said web portion.
12. A semiconductor device according to claim 1 5 , wherein said unitary body comprises one of copper and copper alloy.
13. A semiconductor device according to claim 1 , wherein each of said heat conductive structures is one of a fin and a pin.
14. A semiconductor device comprising:
a semiconductor die having a first electrode disposed on a first major surface thereof and a second electrode disposed on a second major surface thereof;
an electrically conductive web portion having a first major surface electrically connected to said first electrode;
a plurality of heat conductive structures extending away from a second major surface of said web portion, said second major surface of said web portion being opposite to its first major surface;
at least one conductive post extending from an edge of said web portion in a direction away from said first major surface of said web portion; and
an insulation filler disposed between said die and said at least one conductive post.
15. A semiconductor device comprising:
a semiconductor die having a first electrode disposed on a first major surface thereof and a second electrode disposed on a second major surface thereof;
an electrically conductive web portion having a first major surface electrically connected to said first electrode;
a plurality of heat conductive structures extending away from a second major surface of said web portion, said second major surface of said web portion being opposite to its first major surface;
at least one conductive post extending from an edge of said web portion in a direction away from said first major surface of said web portion; and
a third electrode disposed on said second major surface of said die.
16. A semiconductor device comprising:
a semiconductor die having a first electrode disposed on a first major surface thereof and a second electrode disposed on a second major surface thereof;
an electrically conductive web portion having a first major surface electrically connected to said first electrode;
a plurality of heat conductive structures extending away from a second major surface of said web portion, said second major surface of said web portion being opposite to its first major surface;
at least one conductive post extending from an edge of said web portion in a direction away from said first major surface of said web portion; and
a third electrode disposed on said second major surface of said die;
a passivation layer disposed over at least portions of said second electrode and said third electrode of said semiconductor die.
17. A clip comprising:
an electrically conductive web portion having a first major surface for adhesion and electrical connection to an electrode of a semiconductor die, and a second major surface opposite to said first major surface;
a plurality of fins connected to and extending away from said second major surface of said electrically conductive web portion; and
at least one conductive post connected to an edge of said electrically conductive web portion and extending away from said first major surface;
wherein said unitary body clip is comprised of a metal matrix polymer.
18. A clip according to claim 17 , wherein said plurality of fins and said at least one conductive post are integrally connected to said electrically conductive web portion thereby forming a unitary body.
19. A clip according to claim 17 , further comprising at least another conductive post connected to another edge of said electrically conductive web portion and extending away from said first major surface of said web portion.
20. A semiconductor device comprising:
a semiconductor die having a first electrode disposed on a first major surface thereof and a second electrode disposed on a second major surface thereof;
an electrically conductive web portion having a first major surface electrically connected to said first electrode;
a plurality of heat conductive structures thermally and mechanically coupled to a second major surface of said web portion, said second major surface of said web portion being opposite to its first major surface; and
at least one conductive post extending from an edge of said web portion in a direction away from said first major surface of said web portion wherein said second electrode of said semiconductor die is adapted to be directly connected electrically and mechanically to a conductive pad and said conductive post includes a connection surface for electrical and mechanical connection to another conductive pad so that said semiconductor die may become externally connectable to a substrate having said conductive pads with a conductive adhesive without the necessity for an auxiliary element for external connection.
21. A semiconductor device according to claim 20 , wherein said electrically conductive web portion is electrically connected to said first electrode by a layer of conductive adhesive.
22. A semiconductor device according to claim 21 , wherein said conductive adhesive comprises of solder.
23. A semiconductor device according to claim 21 , wherein said conductive adhesive comprises of conductive epoxy.
24. A semiconductor device according to claim 20 , wherein said plurality of heat conductive structures and said at least one conductive post are integral with said electrically conductive web portion thereby forming a unitary body.
25. A semiconductor device according to claim 24 , wherein said unitary body comprises a thermally conductive material.
26. A semiconductor device according to claim 24 , wherein said unitary body comprises one of aluminum and a metal matrix polymer.
27. A semiconductor device according to claim 20 , further comprising an insulation filler disposed between said die and said at least conductive post.
28. A semiconductor device according to claim 20 , further comprising at least another conductive post extending from another edge of said web portion in a direction away from said first major surface of said web portion.
29. A semiconductor device according to claim 20 , wherein said semiconductor die is a power switching device.
30. A semiconductor device according to claim 29 , wherein said power switching device is a MOSFET.
31. A semiconductor device according to claim 30 , wherein said drain electrode of said MOSFET is electrically connected to said web portion.
32. A semiconductor device according to claim 20 , wherein said semiconductor die further includes a third electrode disposed on said second major surface of said die.
33. A semiconductor device according to claim 32 , further comprising a passivation layer disposed over at least portions of said second electrode and said third electrode of said semiconductor die.
34. A semiconductor device according to claim 24 , wherein said unitary body comprises one of copper and copper alloy.
35. A semiconductor device according to claim 20 , wherein said heat conductive structures comprise fins.
36. A semiconductor device according to claim 20 , wherein said heat conductive structures comprise pins.