IP Library Granted Patent US 7,745,724
Granted Patent B2
US 7,745,724 · App. 11/515,418 · Granted Jun 29, 2010

Photovoltaic cells integrated with bypass diode

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Quick Facts
Patent No.
US 7,745,724
App. No.
11/515,418
Granted
Jun 29, 2010
Kind
B2
Abstract

Photovoltaic cells integrated with a bypass diode, as well as related systems, components, and methods, are disclosed.

Claims (22)

1. A system, comprising:

a photovoltaic cell comprising first and second electrodes, a first hole carrier layer, a first hole blocking layer, and a photoactive layer between the first hole carrier layer and the first hole blocking layer the photoactive layer comprising an organic material; and

a diode comprising third and fourth electrodes, a second hole carrier layer and a second hole blocking layer;

wherein the photoactive layer is also between the second hole carrier layer and the second hole blocking layer, the photoactive layer comprises a semiconductor material, the first hole carrier layer is electrically connected with the second hole blocking layer, and the second hole carrier layer is electrically connected with the first hole blocking layer.

2. The system of claim 1 , wherein the diode is so configured that, when the photovoltaic cell is exposed to light, the diode is not exposed to light.

3. The system of claim 1 , wherein the first hole carrier layer is electrically connected with the second hole blocking layer via an electrode.

4. The system of claim 1 , wherein the second hole carrier layer is electrically connected with the first hole blocking layer via an electrode.

5. The system of claim 1 , wherein the semiconductor material comprises an electron donor material and an electron acceptor material.

6. The system of claim 5 , wherein the electron donor material comprises a material selected from the group consisting of discotic liquid crystals, polythiophenes, polyphenylenes, polyphenylvinylenes, polysilanes, polythienylvinylenes, and polyisothianaphthalenes.

7. The system of claim 6 , wherein the electron donor material comprises poly(3-hexylthiophene).

8. The system of claim 5 , wherein the electron acceptor material comprises a material selected from the group consisting of fullerenes, inorganic nanoparticles, oxadiazoles, discotic liquid crystals, carbon nanorods, inorganic nanorods, polymers containing CN groups, polymers containing CF 3 groups, and combinations thereof.

9. The system of claim 8 , wherein the electron acceptor material comprises a substituted fullerene.

10. The system of claim 1 , wherein the first or second hole carrier layer comprises a material selected from the group consisting of polythiophenes, polyanilines, polyvinylcarbazoles, polyphenylenes, polyphenylvinylenes, polysilanes, polythienylenevinylenes, polyisothianaphthanenes, and combinations thereof.

11. The system of claim 1 , wherein the first or second hole blocking layer comprises a material selected from the group consisting of LiF, metal oxides and combinations thereof.

12. The system of claim 1 , wherein the photovoltaic cell is an organic photovoltaic cell.

13. The system of claim 1 , wherein the first hole carrier layer is in contact with the first electrode, the first hole blocking layer is in contact with the second electrode, the second hole carrier layer is in contact with the third electrode, the second hole blocking layer is in contact with the fourth electrode, the first electrode is electrically connected with the fourth electrode, and the second electrode is electrically connected with the third electrode.

14. The system of claim 13 , wherein the first and fourth electrodes are one electrode.

15. The system of claim 13 , wherein the second and third electrodes are one electrode.

16. A system, comprising:

a photovoltaic cell comprising a first hole carrier layer, a first hole blocking layer, and a photoactive layer between the first hole carrier layer and the first hole blocking layer, the photoactive layer comprising an organic material; and

a diode comprising a second hole carrier layer and a second hole blocking layer;

wherein the photoactive layer is also between the second hole carrier layer and the second hole blocking layer, the photoactive layer comprises a semiconductor material, the first hole carrier layer is electrically connected with the second hole blocking layer via a first common electrode, and the second hole carrier layer is electrically connected with the first hole blocking layer via a second common electrode.

Assignments (7)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 15, 2023
From: MERCK PATENT GMBH
To: ASCA
Reel/Frame 062985/0513 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 29, 2013
From: KONARKA TECHNOLOGIES, INC.
To: MERCK KGAA
Reel/Frame 029717/0048 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 29, 2013
From: MERCK KGAA
To: MERCK PATENT GMBH
Reel/Frame 029717/0065 →
SECURITY AGREEMENT Recorded Oct 26, 2011
From: KONARKA TECHNOLOGIES, INC.
To: TOTAL GAS & POWER USA (SAS)
Reel/Frame 027465/0192 →
SECURITY AGREEMENT Recorded Oct 17, 2011
From: KONARKA TECHNOLOGIES, INC.
To: MASSACHUSETTS DEVELOPMENT FINANCE AGENCY
Reel/Frame 027297/0772 →
AMENDMENT TO SECURITY AGREEMENT Recorded Oct 17, 2011
From: KONARKA TECHNOLOGIES, INC.
To: MASSACHUSETTS DEVELOPMENT FINANCE AGENCY
Reel/Frame 027468/0697 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 13, 2006
From: BALASUBRAMANIAN, SRINI; BERKE, HOWARD; COAKLEY, KEVIN; SCHARBER, MARKUS
To: KONARKA TECHNOLOGIES, INC.
Reel/Frame 018519/0465 →