Low loss SOI/CMOS compatible silicon waveguide
View Patent ↗A method and structure for reducing optical signal loss in a silicon waveguide formed within a silicon-on-insulator (SOI) structure uses CMOS processing techniques to round the edges/corners of the silicon material along the extent of the waveguiding region. One exemplary set of processes utilizes an additional, sacrificial silicon layer that is subsequently etched to form silicon sidewall fillets along the optical waveguide, the fillets thus “rounding” the edges of the waveguide. Alternatively, the sacrificial silicon layer can be oxidized to consume a portion of the underlying silicon waveguide layer, also rounding the edges. Instead of using a sacrificial silicon layer, an oxidation-resistant layer may be patterned over a blanket silicon layer, the pattern defined to protect the optical waveguiding region. A thermal oxidation process is then used to convert the exposed portion of the silicon layer into silicon dioxide, forming a bird's beak structure at the edges of the silicon layer, thus defining the “rounded” edges of the silicon waveguiding structure.
1. A low loss optical waveguiding structure disposed on a top surface of a silicon-on-insulator (SOI) wafer comprising a silicon substrate, a buried dielectric layer and a relatively thin silicon surface waveguiding layer disposed over the buried dielectric layer, the low loss optical waveguiding structure comprising
a relatively thin dielectric layer disposed over at least a portion of the relatively thin silicon surface waveguiding layer; and
a silicon waveguiding structure disposed over at least a portion of the relatively thin dielectric layer, the combination of the contiguous portions of the relatively thin silicon surface waveguiding layer, the relatively thin dielectric layer and the silicon waveguiding structure forming an optical waveguiding region, wherein both the relatively thin silicon surface waveguiding layer and the silicon waveguiding structure are defined as exhibiting at least one rounded edge in the waveguiding region to reduce optical loss in the optical waveguiding structure.
2. A low loss optical waveguiding structure as defined in claim 1 wherein the at least one rounded edge comprises a sidewall silicon fillet disposed contiguous with the silicon waveguiding structure.
3. A low loss optical waveguiding structure as defined in claim 1 wherein the structure further comprises a relatively thin etch stop layer disposed over the relatively thin silicon surface waveguiding layer.
4. A low loss optical waveguiding structure as defined in claim 1 wherein the waveguiding structure is a passive device.
5. A low loss optical waveguidmg structure as defined in claim 1 wherein the waveguiding structure is an active device, with the relatively thin silicon surface waveguiding layer exhibiting a first conductivity type and the silicon waveguiding structure exhibiting a second conductivity type.