Array substrate, liquid crystal display panel and liquid crystal display device having the same
View Patent ↗An array substrate including a plurality of pixel regions transmitting light includes a switching element disposed in each of the pixel regions defined by gate and source lines, wherein the switching element is electrically connected to the gate and source lines, a pixel electrode electrically connected to the switching element, a first insulating layer disposed on the switching element, and a second insulating layer disposed under the first insulating layer, wherein a thickness of the second insulating layer is dependent on a peak wavelength of red light.
1. An array substrate including a plurality of pixel regions transmitting light, comprising:
a switching element electrically connected to gate and source lines;
a pixel electrode electrically connected to the switching element;
a first insulating layer disposed on the switching element; and
a second insulating layer disposed under the first insulating layer,
wherein a relationship between a thickness D of the second insulating layer and the peak wavelength W of the red light approximates to the following equation:
W={(D−4500) N /8000}+618 wherein, N represents a refractive index of the second insulating layer, and the unit of the peak wavelength W of the red light and the unit of the thickness D of the second insulating layer are nm and Å, respectively.
2. The array substrate of claim 1 , wherein the second insulating layer comprises:
a gate-insulating layer on the gate lines; and
a passivation layer on the source lines.
3. The array substrate of claim 2 , wherein the second insulating layer has a contact hole through which the switching element is electrically connected to the pixel electrode.
4. The array substrate of claim 2 , wherein the gate-insulating layer comprises silicon nitride.
5. The array substrate of claim 2 , wherein the passivation layer comprises silicon nitride.
6. The array substrate of claim 5 , wherein a thickness of the passivation layer is about 800 Å to about 1,200 Å.
7. The array substrate of claim 1 , wherein the thickness of the second insulating layer is about 4,000 Å to about 5,000 Å.
8. A liquid crystal display panel for displaying an image using light comprising:
an array substrate including a switching element electrically connected to gate and source lines, a first insulating layer on the switching element, and a second insulating layer disposed under the first insulating layer, wherein a relationship between a thickness D of the second insulating layer and the peak wavelength W of the red light approximates to the following equation:
W={(D−4500) N /8000}+618 wherein, N represents a refractive index of the second insulating layer, and the unit of the peak wavelength W of the red light and the unit of the thickness D of the second insulating layer are nm and Å, respectively; and
an opposite substrate combined with the array substrate to receive a liquid crystal layer between the array substrate and the opposite substrate.
9. The liquid crystal display panel of claim 8 , wherein the second insulating layer comprises a gate-insulating layer on the gate lines; and a passivation layer on the source lines.
10. The liquid crystal display panel of claim 9 , wherein the gate-insulating layer comprises silicon nitride.
11. The liquid crystal display panel of claim 9 , wherein the passivation layer comprises silicon nitride.
12. The liquid crystal display panel of claim 8 , wherein a thickness of the passivation layer is about 800 Å to about 1,200 Å.
13. The liquid crystal display panel of claim 8 , wherein the opposite substrate comprises color filter patterns.
14. The array substrate of claim 8 , wherein the thickness of the second insulating layer is about 4,000 Å to about 5,000 Å.
15. A liquid crystal display device comprising:
a light source generating light; and
a liquid crystal display panel including:
an array substrate having a switching element electrically connected to gate and source lines, a first insulating layer on the switching element, and a second insulating layer disposed under the first insulating layer, wherein a relationship between a thickness D of the second insulating layer and the peak wavelength W of the red light approximates to the following equation:
W={(D−4500) N /8000}+618 wherein, N represents a refractive index of the second insulating layer, and the unit of the peak wavelength W of the red light and the unit of the thickness D of the second insulating layer are nm and Å, respectively; and
an opposite substrate combined with the array substrate to receive a liquid crystal layer between the array substrate and the opposite substrate.
16. The liquid crystal display device of claim 15 , wherein the second insulating layer comprises a gate-insulating layer on the gate lines; and a passivation layer on the source lines.
17. The liquid crystal display device of claim 16 , wherein the gate-insulating layer comprises silicon nitride.
18. The liquid crystal display device of claim 16 , wherein the passivation layer comprises silicon nitride.
19. The liquid crystal display device of claim 18 , wherein a thickness of the passivation layer is about 800 Å to about 1,200 Å.
20. The liquid crystal display device of claim 15 , wherein the thickness of the second insulating layer is about 4,000 Å to about 5,000 Å.
21. An array substrate including a plurality of pixel regions transmitting light, comprising:
a switching element electrically connected to gate and source lines; a pixel electrode electrically connected to the switching element; a first insulating layer disposed on the switching element; and
a second insulating layer disposed under the first insulating layer, wherein a relationship between a thickness D of the second insulating layer and the peak wavelength W of the red light approximates to the following equation:
W={(D−4500) N /8000}+618 wherein, N represents a refractive index of the second insulating layer, and the unit of the peak wavelength W of the red light and the unit of the thickness D of the second insulating layer are nm and Å, respectively.
22. The array substrate of claim 21 , wherein the second insulating layer includes a gate-insulating layer on the gate lines; and a passivation layer on the source lines.
23. The array substrate of claim 22 , wherein the gate-insulating layer comprises silicon nitride.
24. The array substrate of claim 22 , wherein the passivation layer comprises silicon nitride.
25. The array substrate of claim 24 , wherein a thickness of the passivation layer is about 800 Å to about 1,200 Å.
26. The array substrate of claim 21 , wherein the thickness of the second insulating layer is about 4,000 Å to about 5,000 Å.